SCHEMBL3755258

SCHEMBL3755258

CC1=C([Ir])CC=C1

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Iodide SCHEMBL14953843 0.97
Hydrochloric Acid SCHEMBL14953949 0.97
Fluoride SCHEMBL14954470 0.97
Bromide SCHEMBL14954180 0.97
SCHEMBL14953862 0.97
SCHEMBL514039 0.95
Carbon Monoxide SCHEMBL10605970 0.92
SCHEMBL1042996 0.90
SCHEMBL8162371 0.69
SCHEMBL216231 0.69

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12356641-B2 Method of manufacturing metal-insulator-metal (MIM) capacitors with noble metal electrode liners ASM IP HOLDING B.V. (NL) 2025-07-08 US disclosed
US-20230006031-A1 METHOD OF MANUFACTURING METAL-INSULATOR-METAL (MIM) CAPACITORS WITH NOBLE METAL ELECTRODE LINERS ASM IP HOLDING B.V. (NL) 2023-01-05 US disclosed
CN-115547993-A Method of fabricating metal-insulator-metal (MIM) capacitor ASM IP私人控股有限公司 2022-12-30 CN disclosed
US-9276210-B1 Conductive barriers for ternary nitride thin-film resistors INTERMOLECULAR, INC. (US) 2016-03-01 US disclosed
US-20100288995-A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME KABUSHIKI KAISHA TOSHIBA (JP) 2010-11-18 US disclosed