⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL4356648 | 0.97 | — | — | |
| SCHEMBL28116028 | 0.97 | LMNA (0.31) | — | |
| SCHEMBL873523 | 0.97 | — | — | |
| SCHEMBL21145 | 0.97 | — | — | |
| Water SCHEMBL6323742 | 0.95 | — | — | |
| SCHEMBL2592648 | 0.95 | — | — | |
| SCHEMBL16345221 | 0.95 | — | — | |
| SCHEMBL28633956 | 0.95 | HPGD (0.32) | — | |
| Hydrochloric Acid SCHEMBL18690254 | 0.95 | — | — | |
| SCHEMBL6669492 | 0.95 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 25 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20240019782-A1 | Composition For Forming Metal Oxide Film, Patterning Process, And Method For Forming Metal Oxide Film | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-01-18 | — | — | US | disclosed |
| EP-4303657-A2 | COMPOSITION FOR FORMING METAL OXIDE FILM, PATTERNING PROCESS, AND METHOD FOR FORMING METAL OXIDE FILM | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-01-10 | — | — | EP | disclosed |
| CN-110515266-B | Pattern forming method | 信越化学工业株式会社 | 2023-06-23 | — | — | CN | disclosed |
| CN-110515272-B | Pattern forming method | 信越化学工业株式会社 | 2023-06-23 | — | — | CN | disclosed |
| US-11614686-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-03-28 | — | — | US | disclosed |
| US-11366386-B2 | Patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2022-06-21 | — | — | US | disclosed |
| US-11231649-B2 | Patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2022-01-25 | — | — | US | disclosed |
| EP-3572880-B1 | PATTERNING PROCESS | SHINETSU CHEMICAL CO (JP) | 2021-05-12 | — | — | EP | disclosed |
| EP-3572878-B1 | PATTERNING PROCESS | SHINETSU CHEMICAL CO (JP) | 2020-12-30 | — | — | EP | disclosed |
| CN-110515272-A | Pattern forming method | SHINETSU CHEMICAL CO | 2019-11-29 | — | — | CN | disclosed |
| US-20190258160-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2019-08-22 | — | — | US | disclosed |
| US-9748097-B2 | Coating liquid for forming metal oxide film, metal oxide film, field-effect transistor, and method for producing field-effect transistor | RICOH COMPANY, LTD. (JP) | 2017-08-29 | — | — | US | disclosed |
| US-20160042947-A1 | COATING LIQUID FOR FORMING METAL OXIDE FILM, METAL OXIDE FILM, FIELD-EFFECT TRANSISTOR, AND METHOD FOR PRODUCING FIELD-EFFECT TRANSISTOR | RICOH COMPANY, LTD. (JP) | 2016-02-11 | — | — | US | disclosed |
| EP-2962327-A1 | COATING LIQUID FOR FORMING METAL OXIDE FILM, METAL OXIDE FILM, FIELD-EFFECT TRANSISTOR, AND METHOD FOR PRODUCING FIELD-EFFECT TRANSISTOR | Ricoh Company, Ltd. (JP) | 2016-01-06 | — | — | EP | disclosed |
| WO-2014157733-A1 | COATING LIQUID FOR FORMING METAL OXIDE FILM, METAL OXIDE FILM, FIELD-EFFECT TRANSISTOR, AND METHOD FOR PRODUCING FIELD-EFFECT TRANSISTOR | RICOH COMPANY, LTD. (JP) | 2014-10-02 | — | — | WO | disclosed |
| US-7837976-B2 | Activated aluminum hydride hydrogen storage compositions and uses thereof | BROOKHAVEN SCIENCE ASSOCIATES, LLC (US) | 2010-11-23 | — | — | US | disclosed |
| EP-1798599-B1 | Antireflection film composition, patterning process and substrate using the same | SHINETSU CHEMICAL CO (JP) | 2008-08-06 | — | — | EP | disclosed |
| EP-1798599-A1 | Antireflection film composition, patterning process and substrate using the same | Shinetsu Chemical Co., Ltd. (JP) | 2007-06-20 | — | — | EP | disclosed |
| US-20070134916-A1 | Antireflection film composition, patterning process and substrate using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-06-14 | — | — | US | disclosed |
| US-20070025908-A1 | Activated aluminum hydride hydrogen storage compositions and uses thereof | ENERGY, UNITED STATES DEPARTMENT OF | 2007-02-01 | — | — | US | disclosed |