SCHEMBL3757594

SCHEMBL3757594

[BaH2].[O-2].[O-2].[Ti+4]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5574465 0.87
SCHEMBL3938862 0.87
SCHEMBL11062055 0.82
SCHEMBL5867087 0.82
SCHEMBL2179 0.82
SCHEMBL5193510 0.82
SCHEMBL8724001 0.82
SCHEMBL18984675 0.82
SCHEMBL93246 0.82
SCHEMBL9998309 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 17 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7842390-B2 Chain end functionalized fluoropolymers having good electrical properties and good chemical reactivity THE PENN STATE RESEARCH FOUNDATION (US) 2010-11-30 US claimed
CN-115939935-A Vertical cavity surface emitting laser illuminator packaging structure with embedded capacitor 朗美通经营有限责任公司 2023-04-07 CN disclosed
US-20230047740-A1 VERTICAL CAVITY SURFACE EMITTING LASER ILLUMINATOR PACKAGE WITH EMBEDDED CAPACITOR LUMENTUM OPERATIONS LLC 2023-02-16 US disclosed
US-9117692-B2 Semiconductor device having dual metal silicide layers and method of manufacturing the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2015-08-25 US disclosed
US-20150028423-A1 SEMICONDUCTOR DEVICE HAVING DUAL METAL SILICIDE LAYERS AND METHOD OF MANUFACTURING THE SAME SAMSUNG ELECTRONICS CO., LTD. (KR) 2015-01-29 US disclosed
US-8889552-B2 Semiconductor device having dual metal silicide layers and method of manufacturing the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2014-11-18 US disclosed
US-20140248761-A1 SEMICONDUCTOR DEVICE HAVING DUAL METAL SILICIDE LAYERS AND METHOD OF MANUFACTURING THE SAME SAMSUNG ELECTRONICS CO., LTD. (KR) 2014-09-04 US disclosed
EP-2069411-B1 CHAIN END FUNCTIONALIZED FLUOROPOLYMERS HAVING GOOD ELECTRICAL PROPERTIES AND GOOD CHEMICAL REACTIVITY PENN STATE RES FOUND (US) 2013-08-28 EP disclosed
US-7842390-B2 Chain end functionalized fluoropolymers having good electrical properties and good chemical reactivity THE PENN STATE RESEARCH FOUNDATION (US) 2010-11-30 US disclosed
EP-2069411-A1 CHAIN END FUNCTIONALIZED FLUOROPOLYMERS HAVING GOOD ELECTRICAL PROPERTIES AND GOOD CHEMICAL REACTIVITY The Penn State Research Foundation (US) 2009-06-17 EP disclosed
WO-2008041998-A1 CHAIN END FUNCTIONALIZED FLUOROPOLYMERS HAVING GOOD ELECTRICAL PROPERTIES AND GOOD CHEMICAL REACTIVITY THE PENN STATE RESEARCH FOUNDATION (US) 2008-04-10 WO disclosed
US-20080081195-A1 Chain end functionalized fluoropolymers having good electrical properties and good chemical reactivity DAIKIN AMERICA, INC. 2008-04-03 US disclosed
EP-1397940-B1 LIGHT EMISSIVE DISPLAY WITH A BLACK OR COLOR DIELECTRIC LAYER UNIV CINCINNATI (US) 2005-04-27 EP disclosed
EP-1397940-A1 LIGHT EMISSIVE DISPLAY WITH A BLACK OR COLOR DIELECTRIC LAYER University of Cincinnati (US) 2004-03-17 EP disclosed
US-6635306-B2 Light emissive display with a black or color dielectric layer UNIVERSITY OF CINCINNATI 2003-10-21 US disclosed
WO-2003001853-A1 LIGHT EMISSIVE DISPLAY WITH A BLACK OR COLOR DIELECTRIC LAYER UNIVERSITY OF CINCINNATI (US) 2003-01-03 WO disclosed
US-20020195932-A1 Light emissive display with a black or color dielectric layer UNIVERSITY OF CINCINNATI (US) 2002-12-26 US disclosed