⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3757594 | 0.87 | — | — | |
| SCHEMBL7647327 | 0.87 | — | — | |
| SCHEMBL5357990 | 0.75 | — | — | |
| SCHEMBL7032532 | 0.75 | — | — | |
| SCHEMBL578504 | 0.75 | — | — | |
| SCHEMBL9590939 | 0.75 | — | — | |
| SCHEMBL5574465 | 0.75 | — | — | |
| SCHEMBL19119279 | 0.75 | — | — | |
| SCHEMBL578896 | 0.75 | — | — | |
| SCHEMBL986829 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 26 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9117692-B2 | Semiconductor device having dual metal silicide layers and method of manufacturing the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2015-08-25 | — | — | US | disclosed |
| US-20150028423-A1 | SEMICONDUCTOR DEVICE HAVING DUAL METAL SILICIDE LAYERS AND METHOD OF MANUFACTURING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2015-01-29 | — | — | US | disclosed |
| US-8889552-B2 | Semiconductor device having dual metal silicide layers and method of manufacturing the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2014-11-18 | — | — | US | disclosed |
| US-20140248761-A1 | SEMICONDUCTOR DEVICE HAVING DUAL METAL SILICIDE LAYERS AND METHOD OF MANUFACTURING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2014-09-04 | — | — | US | disclosed |
| US-8382903-B2 | Vaporizer and semiconductor processing system | TOKYO ELECTRON LIMITED (JP) | 2013-02-26 | — | — | US | disclosed |
| US-8197600-B2 | Vaporizer and semiconductor processing system | TOKYO ELECTRON LIMITED (JP) | 2012-06-12 | — | — | US | disclosed |
| CN-101285178-B | Vaporizer and semiconductor processing system | TOKYO ELECTRON LIMITED (JP) | 2011-12-14 | — | — | CN | disclosed |
| CN-101573772-B | Mim capacitor | NXP BV | 2011-10-05 | — | — | CN | disclosed |
| CN-101135047-B | Gasification device and semiconductor processing system | TOKYO ELECTRON LTD | 2011-04-20 | — | — | CN | disclosed |
| CN-1955338-B | Vaporizer and semiconductor processing system | TOKYO ELECTRON LTD | 2010-12-01 | — | — | CN | disclosed |
| US-7297983-B2 | Method for fabricating an integrated circuit on a semiconductor substrate | INFINEON TECHNOLOGIES AG (DE) | 2007-11-20 | — | — | US | disclosed |
| US-20070155139-A1 | Method for fabricating an integrated circuit on a semiconductor substrate | INFINEON TECHNOLOGIES AG (DE) | 2007-07-05 | — | — | US | disclosed |
| CN-1955338-A | Vaporizer and semiconductor processing system | TOKYO ELECTRON LTD (JP) | 2007-05-02 | — | — | CN | disclosed |
| US-20070079760-A1 | Vaporizer and semiconductor processing system | TOKYO ELECTRON LIMITED (JP) | 2007-04-12 | — | — | US | disclosed |
| US-20020081445-A1 | Composite material manufacturing method thereof, substrate processing apparatus and manufacturing method thereof, substrate mouting stage and manufacturing method thereof, and substrate processing method | KADOMURA SHINGO (JP) | 2002-06-27 | — | — | US | disclosed |
| US-6391437-B1 | CORDIERITE CERAMIC HAVING ALUMINUM NITRIDE AND/OR TEXTURE FILLED ALUMINUM BASED MATERIAL AND ALUMINUM OXIDE OR NITRIDE CERAMIC LAYER; HIGH TEMPERATURE STABILITY; PLASMA ETCHING APPARATUS | SONY CORPORATION (JP) | 2002-05-21 | — | — | US | disclosed |
| US-6319765-B1 | Method for fabricating a memory device with a high dielectric capacitor | HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. (KR) | 2001-11-20 | — | — | US | disclosed |
| WO-1999028972-A1 | SEMICONDUCTOR DEVICE WITH FERROELECTRIC CAPACITOR DIELECTRIC AND METHOD FOR MAKING | MOTOROLA INC. (US) | 1999-06-10 | — | — | WO | disclosed |
| CN-1213145-A | Electronic component, method for making, and target making electronic component | MOTOROLA INC (US) | 1999-04-07 | — | — | CN | disclosed |
| US-5066928-A | Soliton pulse compressor | GENERAL ATOMICS (US) | 1991-11-19 | — | — | US | disclosed |