⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL588684 | 0.82 | — | — | |
| SCHEMBL6131331 | 0.82 | — | — | |
| SCHEMBL4650879 | 0.82 | — | — | |
| SCHEMBL30531467 | 0.67 | — | — | |
| SCHEMBL5488123 | 0.67 | — | — | |
| Strontium SCHEMBL30661364 | 0.67 | — | — | |
| SCHEMBL31153388 | 0.67 | — | — | |
| SCHEMBL34467259 | 0.67 | — | — | |
| SCHEMBL3279939 | 0.67 | — | — | |
| SCHEMBL7878726 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 32 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-116145231-A | Synthesis method of rare earth nickel-based oxide electronic phase change film material | 北京科技大学 | 2023-05-23 | — | — | CN | claimed |
| CN-107359240-B | A kind of preparation method of the device with metal-insulator transition function | 中国科学院宁波材料技术与工程研究所 | 2019-09-13 | — | — | CN | claimed |
| CN-107359240-A | A kind of preparation method of the device with metal-insulator transition function | 中国科学院宁波材料技术与工程研究所 | 2017-11-17 | — | — | CN | claimed |
| CN-106992192-A | A kind of photoelectric processing device | 中国科学院宁波材料技术与工程研究所 | 2017-07-28 | — | — | CN | claimed |
| CN-104701391-B | A kind of photoelectric information conversion element and its application | 中国科学院宁波材料技术与工程研究所 | 2017-03-15 | — | — | CN | claimed |
| CN-104701391-A | Photoelectric information conversion element and application thereof | NINGBO INST MATERIALS TECHNOLOGY & ENG CAS | 2015-06-10 | — | — | CN | claimed |
| CN-101656198-B | Electroetching device and method of conductive oxide film | UNIV SHANGHAI | 2012-08-08 | — | — | CN | claimed |
| CN-101656198-A | Electroetching device and method of conductive oxide film | UNIV SHANGHAI | 2010-02-24 | — | — | CN | claimed |
| CN-117228729-A | Synthesis method of rare earth alkaline earth manganese-based oxide electronic phase change film material | 华北电力大学 | 2023-12-15 | — | — | CN | disclosed |
| CN-116145231-A | Synthesis method of rare earth nickel-based oxide electronic phase change film material | 北京科技大学 | 2023-05-23 | — | — | CN | disclosed |
| CN-107359240-B | A kind of preparation method of the device with metal-insulator transition function | 中国科学院宁波材料技术与工程研究所 | 2019-09-13 | — | — | CN | disclosed |
| CN-107359240-A | A kind of preparation method of the device with metal-insulator transition function | 中国科学院宁波材料技术与工程研究所 | 2017-11-17 | — | — | CN | disclosed |
| CN-106992192-A | A kind of photoelectric processing device | 中国科学院宁波材料技术与工程研究所 | 2017-07-28 | — | — | CN | disclosed |
| CN-104701391-B | A kind of photoelectric information conversion element and its application | 中国科学院宁波材料技术与工程研究所 | 2017-03-15 | — | — | CN | disclosed |
| US-20090315144-A1 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE | FUJITSU MICROELECTRONICS LIMITED (JP) | 2009-12-24 | — | — | US | disclosed |
| US-7176132-B2 | Manufacturing method of semiconductor device | FUJITSU LIMITED (JP) | 2007-02-13 | — | — | US | disclosed |
| US-20040166596-A1 | Manufacturing method of semiconductor device | FUJITSU SEMICONDUCTOR LIMITED (JP) | 2004-08-26 | — | — | US | disclosed |
| EP-1416521-A2 | Manufacturing method of semiconductor device | FUJITSU LIMITED (JP) | 2004-05-06 | — | — | EP | disclosed |
| EP-1341220-A2 | Semiconductor device manufacturing method | FUJITSU LIMITED (JP) | 2003-09-03 | — | — | EP | disclosed |
| US-20030162401-A1 | Semiconductor device manufacturing method | FUJITSU LIMITED (JP) | 2003-08-28 | — | — | US | disclosed |