SCHEMBL379775

SCHEMBL379775

CC(=CC(C)=NC(C)(C)C)NC(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL23825481 1.00
SCHEMBL23825427 0.81 CA12 (0.33)
SCHEMBL23825429 0.81 CA12 (0.33)
SCHEMBL3758685 0.76 TSHR (0.34)
SCHEMBL3758675 0.76 TSHR (0.34)
SCHEMBL12922455 0.76
SCHEMBL23825392 0.76
SCHEMBL3758681 0.76 TSHR (0.34)
SCHEMBL23825454 0.75 CYP2D6 (0.33)
SCHEMBL23825451 0.75 CYP2D6 (0.33)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-3882234-B1 COBALT COMPLEX, METHOD FOR MANUFACTURING SAME, AND METHOD FOR MANUFACTURING COBALT-CONTAINING THIN FILM TOSOH CORP (JP) 2024-05-08 EP disclosed
US-11753429-B2 Cobalt complex, method for manufacturing same, and method for manufacturing cobalt-containing thin film TOSOH CORPORATION (JP) 2023-09-12 US disclosed
CN-112839924-B Cobalt complex, method for producing same, and method for producing cobalt-containing thin film 东曹株式会社 2023-07-07 CN disclosed
US-20220017553-A1 COBALT COMPLEX, METHOD FOR MANUFACTURING SAME, AND METHOD FOR MANUFACTURING COBALT-CONTAINING THIN FILM SAGAMI CHEMICAL RESEARCH INSTITUTE (JP) 2022-01-20 US disclosed
EP-3882234-A1 COBALT COMPLEX, METHOD FOR MANUFACTURING SAME, AND METHOD FOR MANUFACTURING COBALT-CONTAINING THIN FILM Tosoh Corporation (JP) 2021-09-22 EP disclosed
CN-112839924-A Cobalt complex, method for producing same, and method for producing cobalt-containing thin film 东曹株式会社 2021-05-25 CN disclosed
US-9234273-B2 Unsymmetrical ligand sources, reduced symmetry metal-containing compounds, and systems and methods including same MICRON TECHNOLOGY, INC. (US) 2016-01-12 US disclosed
EP-1907354-B1 UNSYMMETRICAL LIGAND SOURCES, REDUCED SYMMETRY METAL-CONTAINING COMPOUNDS, AND SYSTEMS AND METHODS INCLUDING SAME MICRON TECHNOLOGY INC (US) 2012-01-25 EP disclosed
US-20110071316-A1 Unsymmetrical Ligand Sources, Reduced Symmetry Metal-Containing Compounds, and Systems and Methods Including Same MICRON TECHNOLOGY, INC. (US) 2011-03-24 US disclosed
US-7858523-B2 Unsymmetrical ligand sources, reduced symmetry metal-containing compounds, and systems and methods including same MICRON TECHNOLOGY, INC. (US) 2010-12-28 US disclosed
US-20090275199-A1 UNSYMMETRICAL LIGAND SOURCES, REDUCED SYMMETRY METAL-CONTAINING COMPOUNDS, AND SYSTEMS AND METHODS INCLUDING SAME MICRON TECHNOLOGY, INC. (US) 2009-11-05 US disclosed
US-7572731-B2 Group 2a, yttrium or lanthanide complexes of a beta-diketiminate ligand; for example, Strontium bis(N-isopropyl-(4-tert-butylimino)-2-penten-2-aminato); for chemical vapor deposition in semiconductor manufacture; higher vapor pressure, lower melting point, and lower sublimation point MICRON TECHNOLOGY, INC. (US) 2009-08-11 US disclosed
US-20080214001-A9 Unsymmetrical ligand sources, reduced symmetry metal-containing compounds, and systems and methods including same MICRON TECHNOLOGY, INC. (US) 2008-09-04 US disclosed
EP-1907354-A2 UNSYMMETRICAL LIGAND SOURCES, REDUCED SYMMETRY METAL-CONTAINING COMPOUNDS, AND SYSTEMS AND METHODS INCLUDING SAME MICRON TECHNOLOGY, INC. (US) 2008-04-09 EP disclosed
WO-2007002674-A2 UNSYMMETRICAL LIGAND SOURCES, REDUCED SYMMETRY METAL-CONTAINING COMPOUNDS, AND SYSTEMS AND METHODS INCLUDING SAME MICRON TECHNOLOGY, INC. (US) 2007-01-04 WO disclosed
US-20060292873-A1 Unsymmetrical ligand sources, reduced symmetry metal-containing compounds, and systems and methods including same MICRON TECHNOLOGY, INC. (US) 2006-12-28 US disclosed