Known targets — ChEMBL curated mechanism
The experimentally established mechanism targets of Lithium Ion. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Lithium Ion SCHEMBL3972763 | 0.87 | — | — | |
| SCHEMBL3467470 | 0.82 | — | — | |
| SCHEMBL33275 | 0.82 | — | — | |
| Lithium Ion SCHEMBL36737 | 0.82 | — | — | |
| Fluoride Ion SCHEMBL23403847 | 0.67 | — | — | |
| Lithium Ion SCHEMBL16616656 | 0.67 | — | — | |
| SCHEMBL5434695 | 0.67 | — | — | |
| SCHEMBL2539870 | 0.67 | — | — | |
| Hydrochloric Acid SCHEMBL11165395 | 0.67 | — | — | |
| Lithium Ion SCHEMBL6890378 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20090140296-A1 | Epitaxial Growth of Cubic Crystalline Semiconductor Alloys on Basal Plane of Trigonal or Hexagonal Crystal | United States of America as represented by the Administrator of the National Aeronautics and | 2009-06-04 | — | — | US | claimed |
| US-7906358-B2 | Epitaxial growth of cubic crystalline semiconductor alloys on basal plane of trigonal or hexagonal crystal | THE UNITED STATES OF AMERICA AS REPRESENTED BY THE ADMINISTRATOR OF THE NATIONAL AERONAUTICS AND SPACE ADMINISTRATION (US) | 2011-03-15 | — | — | US | disclosed |
| US-20090140296-A1 | Epitaxial Growth of Cubic Crystalline Semiconductor Alloys on Basal Plane of Trigonal or Hexagonal Crystal | United States of America as represented by the Administrator of the National Aeronautics and | 2009-06-04 | — | — | US | disclosed |
| WO-2009052462-A1 | EPITAXIAL GROWTH OF CUBIC CRYSTALLINE SEMICONDUCTOR ALLOYS ON BASAL PLANE OF TRIGONAL OR HEXAGONAL CRYSTAL | U.S.A AS REPRESENTATED BY THE ADMINISTRATOR OF THE NATIONAL AERONAUTICS AND SPACE ADMINISTRATION (US) | 2009-04-23 | — | — | WO | disclosed |