SCHEMBL3836352

SCHEMBL3836352

C1=C(C2=CCCCCC2)CCCCC1.CCO[SiH](OCC)OCC

nearest known ligand 0.33

Predicted protein targets (top 10)

geneUniProtsupporting neighboursconfidence
JAK2 O60674 1/20 0.33
JAK3 P52333 1/20 0.33
PSMB5 P28074 4/20 0.33
RAB9A P51151 2/20 0.32
NPC1 O15118 1/20 0.32
ALDH1A1 P00352 2/20 0.31
CXCR3 P49682 1/20 0.31
PTGS2 P35354 1/20 0.30
TYMP P19971 1/20 0.30
TDP1 Q9NUW8 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3838544 0.85 HDAC1 (0.33) PSMB5RAB9ANPC1
SCHEMBL21722770 0.80 JAK2 (0.35) JAK2JAK3PSMB5RAB9ANPC1
SCHEMBL3840270 0.78 RAB9A (0.37) JAK2JAK3PSMB5RAB9ANPC1
SCHEMBL28469655 0.77 JAK2 (0.33) JAK2JAK3PSMB5RAB9ANPC1
SCHEMBL3836496 0.77 JAK2 (0.33) JAK2JAK3PSMB5RAB9ANPC1
SCHEMBL11201526 0.76 TYMP (0.41) JAK2JAK3PSMB5RAB9ANPC1
SCHEMBL3233355 0.76 TYMP (0.41) JAK2JAK3PSMB5RAB9ANPC1
SCHEMBL21057468 0.76 TYMP (0.41) JAK2JAK3PSMB5RAB9ANPC1
SCHEMBL18244171 0.76 TYMP (0.41) JAK2JAK3PSMB5RAB9ANPC1
SCHEMBL3502363 0.76 TYMP (0.41) JAK2JAK3PSMB5RAB9ANPC1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 59 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2628744-B1 Silicon-containing surface modifier, resist underlayer film composition containing this, and patterning process SHINETSU CHEMICAL CO (JP) 2016-11-30 EP claimed
WO-2003081223-A2 SENSORS WITH VARIABLE RESPONSE BEHAVIOR HRL LABORATORIES, LLC (US) 2003-10-02 WO claimed
CN-114660896-B Composition for forming silicon-containing resist underlayer film, pattern forming method, and silicon compound 信越化学工业株式会社 2024-06-11 CN disclosed
WO-2024085044-A1 POLYMERIZABLE COMPOSITION AND NORBORNENE RESIN RIMTEC株式会社 2024-04-25 WO disclosed
WO-2024085043-A1 CATALYST LIQUID AND POLYMERIZABLE COMPOSITION RIMTEC株式会社 2024-04-25 WO disclosed
CN-116804825-A Composition for forming silicon-containing metal hard mask and pattern forming method 信越化学工业株式会社 2023-09-26 CN disclosed
CN-111458980-B Composition for forming underlayer film of silicon-containing resist and method for forming pattern 信越化学工业株式会社 2023-08-11 CN disclosed
CN-116569282-A Polymerizable composition and resin-impregnated superconducting coil RIMTEC株式会社 2023-08-08 CN disclosed
WO-2020196642-A1 FILM-FORMING COMPOSITION 日産化学株式会社 2020-10-01 WO disclosed
US-10647821-B2 Production process for silicone polymer TORAY FINE CHEMICALS CO., LTD. (JP) 2020-05-12 US disclosed
US-20190023848-A1 PRODUCTION PROCESS FOR SILICONE POLYMER TORAY FINE CHEMICALS CO., LTD. (JP) 2019-01-24 US disclosed
EP-2628744-A1 Silicon-containing surface modifier, resist underlayer film composition containing this, and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2013-08-21 EP disclosed
US-20130210236-A1 SILICON-CONTAINING SURFACE MODIFIER, RESIST UNDERLAYER FILM COMPOSITION CONTAINING THIS, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-08-15 US disclosed
EP-2599819-A1 Silicon-containing resist underlayer film-forming composition and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2013-06-05 EP disclosed
EP-2599818-A1 Silicon-containing resist underlayer film-forming composition and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2013-06-05 EP disclosed
US-20130137041-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-05-30 US disclosed
US-20130137271-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-05-30 US disclosed
US-8198016-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-06-12 US disclosed
US-20090286188-A1 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-11-19 US disclosed
CN-1941359-A Porous composite material and method for making same IBM (US) 2007-04-04 CN disclosed