Adamantane

Adamantane

SCHEMBL383968

C1C2CC3CC1CC(C2)C3.Oc1ccccc1

nearest known ligand 0.65

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Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA12 O43570 3/20 0.65
CA2 P00918 3/20 0.65
CA9 Q16790 3/20 0.65
CA14 Q9ULX7 3/20 0.65
CA1 P00915 2/20 0.65
CA3 P07451 2/20 0.65
CA4 P22748 2/20 0.65
GLA P06280 1/20 0.65
TDP1 Q9NUW8 1/20 0.65
MMP3 P08254 1/20 0.46
BCL2L1 Q07817 1/20 0.46
ESR1 P03372 6/20 0.40
ESR2 Q92731 6/20 0.40
MEN1 O00255 2/20 0.40
NPC1 O15118 2/20 0.40
KMT2A Q03164 2/20 0.40
CHRM2 P08172 1/20 0.40
CHRM4 P08173 1/20 0.40
CHRM5 P08912 1/20 0.40
LTA4H P09960 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Adamantane SCHEMBL4444785 1.00 CA12 (0.65) CA12CA2CA9CA14CA1
Adamantane SCHEMBL5826202 1.00 CA12 (0.65) CA12CA2CA9CA14CA1
Adamantane SCHEMBL29166015 0.97 CA12 (0.61) CA12CA2CA9CA14CA1
Phenol SCHEMBL27766689 0.89 CA12 (0.58) CA12CA2CA9CA14CA1
Phenol SCHEMBL11852630 0.89 CA12 (0.58) CA12CA2CA9CA14CA1
Phenol SCHEMBL936069 0.81
Phenol SCHEMBL11316144 0.81 CA12 (0.85) CA12CA2CA9CA14CA1
Phenol SCHEMBL27899230 0.81 CA12 (0.85) CA12CA2CA9CA14CA1
Phenol SCHEMBL10974607 0.81 CA12 (0.85) CA12CA2CA9CA14CA1
Phenol SCHEMBL27535722 0.81 CA12 (0.85) CA12CA2CA9CA14CA1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 213 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-114181091-A Synthesis process of adamantane triphenylamine 苏州久显新材料有限公司 2022-03-15 CN claimed
CN-105601885-B Ultraviolet light solidfication water polyurethane acrylate and preparation method thereof 贾学明 2018-05-29 CN claimed
CN-105399913-B UV-cured polyurethane acrylate and preparation method thereof 贾学明 2018-05-29 CN claimed
CN-105440260-B UV-cured polyurethane acrylate and preparation method thereof 贾学明 2018-05-29 CN claimed
CN-101613089-B Absorption liquid for gas desulfurization and desulfurization method thereof XITAI SU 2011-08-03 CN claimed
US-20240242967-A1 Polymer For Forming Metal-Containing Film, Composition For Forming Metal-Containing Film, And Patterning Process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-07-18 US disclosed
EP-4398037-A1 COMPOUND FOR FORMING METAL-CONTAINING FILM, COMPOSITION FOR FORMING METAL-CONTAINING FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-07-10 EP disclosed
US-12032293-B2 Composition for forming organic film, patterning process, and polymer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-07-09 US disclosed
EP-4390547-A1 POLYMER FOR FORMING METAL-CONTAINING FILM, COMPOSITION FOR FORMING METAL-CONTAINING FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-06-26 EP disclosed
EP-3828630-B1 MATERIAL FOR FORMING ORGANIC FILM, PATTERNING PROCESS, AND POLYMER SHINETSU CHEMICAL CO (JP) 2024-06-19 EP disclosed
CN-114181091-B Synthesis process of adamantane triphenylamine 维思普新材料(苏州)有限公司 2024-06-14 CN disclosed
CN-114380849-B Material for forming organic film, method for forming pattern, and compound for forming organic film 信越化学工业株式会社 2024-05-24 CN disclosed
US-20100099044-A1 Method for forming resist underlayer film, patterning process using the same, and composition for the resist underlayer film SHIN-ETSU CHEMICAL CO.,LTD. (JP) 2010-04-22 US disclosed
US-20090286188-A1 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-11-19 US disclosed
US-7235866-B2 Low dielectric constant film material, film and semiconductor device using such material FUJITSU LIMITED (JP) 2007-06-26 US disclosed
US-20060022357-A1 Low dielectric constant film material, film and semiconductor device using such material FUJITSU LIMITED (JP) 2006-02-02 US disclosed
US-6958525-B2 siloxane resin and polycarbosilane dissolved in solvent. By using this solution, a low dielectric film is formed which contains siloxane resin and polycarbosilane bonded to the siloxane resin. Material of a low dielectric film is provided FUJITSU LIMITED (JP) 2005-10-25 US disclosed
US-20030207131-A1 siloxane resin and polycarbosilane dissolved in solvent. By using this solution, a low dielectric film is formed which contains siloxane resin and polycarbosilane bonded to the siloxane resin. Material of a low dielectric film is provided FUJITSU LIMITED 2003-11-06 US disclosed
US-6613834-B2 Film forming material comprising siloxane resin and polycarbosilane dissolved together, having relative dielectric constant in range from about 2.5 to 3.0 FUJITSU LIMITED (JP) 2003-09-02 US disclosed
US-20010033026-A1 Film forming material comprising siloxane resin and polycarbosilane dissolved together, having relative dielectric constant in range from about 2.5 to 3.0 FUJITSU LIMITED (JP) 2001-10-25 US disclosed