SCHEMBL3853667

SCHEMBL3853667

[Cr].[Cu].[Ni].[SiH4]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3853665 1.00
SCHEMBL28340465 0.89
SCHEMBL28148616 0.89
SCHEMBL9309551 0.89
SCHEMBL20236052 0.89
SCHEMBL3853601 0.89
SCHEMBL3853598 0.89
SCHEMBL28408484 0.89
SCHEMBL29198611 0.89
SCHEMBL38657446 0.87

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 79 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-4623123-A1 DIFFUSION BONDED TUNGSTEN CONTAINING TARGET TO COPPER ALLOY BACKING PLATE HONEYWELL INTERNATIONAL INC. (US) 2025-10-01 EP claimed
CN-119347325-A Copper-chromium-nickel-silicon alloy heat processing treatment process 丹东华强有色金属加工有限公司 2025-01-24 CN claimed
WO-2024147983-A1 DIFFUSION BONDED TUNGSTEN CONTAINING TARGET TO COPPER ALLOY BACKING PLATE HONEYWELL INTERNATIONAL INC. (US) 2024-07-11 WO claimed
US-20240229225-A1 DIFFUSION BONDED TUNGSTEN CONTAINING TARGET TO COPPER ALLOY BACKING PLATE SOLSTICE ADVANCED MATERIALS US, INC. 2024-07-11 US claimed
CN-115896538-B High-performance copper-nickel-silicon-chromium alloy plate and processing method and application thereof 中色正锐(山东)铜业有限公司 2024-04-26 CN claimed
CN-116875782-A Copper-chromium-nickel-silicon alloy backboard and processing method and application thereof 宁波江丰电子材料股份有限公司 2023-10-13 CN claimed
CN-115354189-B Copper-nickel-chromium-silicon material for injection mold and blow mold and preparation method thereof 陕西斯瑞新材料股份有限公司 2023-05-12 CN claimed
CN-115354189-A Copper-nickel-chromium-silicon material for injection mold and blow mold and preparation method thereof 陕西斯瑞新材料股份有限公司 2022-11-18 CN claimed
CN-114369802-A Machining method of target assembly 宁波江丰电子材料股份有限公司 2022-04-19 CN claimed
CN-113957396-A Machining method of target assembly 宁波江丰电子材料股份有限公司 2022-01-21 CN claimed
CN-109590473-B Preparation method of porous titanium-based drug delivery atomizing core and atomizing heating component 北京科技大学 2020-07-17 CN claimed
CN-111321361-A Manufacturing method of copper-chromium-nickel-silicon alloy back plate for sputtering target material 宁波江丰电子材料股份有限公司 2020-06-23 CN claimed
CN-109182795-B Preparation method of high-strength high-conductivity rare earth copper-nickel-silicon-chromium alloy 北京科技大学 2020-06-05 CN claimed
CN-102108459-B High-strength nickel-chromium-silicon-copper alloy material and processing technology thereof Shenyang xinggong copper industry co ltd 2013-04-24 CN claimed
US-20260139362-A1 COBALT-NIOBIUM ALLOY SPUTTERING TARGET ASSEMBLY AND METHOD OF MAKING HONEYWELL INT INC (US) 2026-05-21 US disclosed
US-20250327171-A1 COBALT-TANTALUM ALLOY SPUTTERING TARGET ASSEMBLY AND METHOD OF MAKING SOLSTICE ADVANCED MATERIALS US, INC. 2025-10-23 US disclosed
US-20250327172-A1 COBALT-TITANIUM ALLOY SPUTTERING TARGET ASSEMBLY AND METHOD OF MAKING SOLSTICE ADVANCED MATERIALS US, INC. 2025-10-23 US disclosed
US-20090229975-A1 Target formed of Sintering-Resistant Material of High-Melting Point Metal Alloy, High-Melting Point Metal Silicide, High-Melting Point Metal Carbide, High-Melting Point Metal Nitride, or High-Melting Point Metal Boride, Process for Producing the Target, Assembly of the Sputtering Target-Backing Plate, and Process for Producing the Same NIPPON MINING & METALS CO., LTD. (JP) 2009-09-17 US disclosed
US-20090183803-A1 COPPER-NICKEL-SILICON ALLOYS GBC METALS, LLC 2009-07-23 US disclosed
WO-2009082695-A1 COPPER-NICKEL-SILICON ALLOYS GBC METALS LLC (US) 2009-07-02 WO disclosed