SCHEMBL3873875

SCHEMBL3873875

c1ccc2c([S+]3CCCC3)ccc(OC3CCCO3)c2c1

nearest known ligand 0.36

Predicted protein targets (top 7)

geneUniProtsupporting neighboursconfidence
PDE4B Q07343 3/20 0.36
PDE4A P27815 1/20 0.32
PDE4C Q08493 1/20 0.32
PDE4D Q08499 1/20 0.32
KDM4E B2RXH2 1/20 0.31
TSHR P16473 1/20 0.31
KDM4C Q9H3R0 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3876395 0.96 KDM4C (0.34) PDE4BPDE4APDE4CPDE4DKDM4C
Trifluoromethanesulfonic Acid SCHEMBL648142 0.89 PDE4B (0.33) PDE4B
Trifluoromethanesulfonic Acid SCHEMBL646788 0.85 PDE4B (0.31) PDE4B
SCHEMBL3164953 0.84 PDE4B (0.31) PDE4B
SCHEMBL3157671 0.83 PDE4B (0.30) PDE4B
Trifluoromethanesulfonic Acid SCHEMBL6564088 0.81 PDE4B (0.32) PDE4B
SCHEMBL6362992 0.81 KDM4C (0.42) PDE4BPDE4APDE4CPDE4DKDM4E
SCHEMBL3158579 0.81
SCHEMBL3158957 0.80
Trifluoromethanesulfonic Acid SCHEMBL6564015 0.78

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 17 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7638261-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2009-12-29 US disclosed
US-20090148790-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2009-06-11 US disclosed
US-7521169-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2009-04-21 US disclosed
US-20080187859-A1 Radiation-Sensitive Resin Composition JSR CORPORATION (JP) 2008-08-07 US disclosed
US-20070269735-A1 Radiation-Sensitive Resin Composition JSR CORPORATION (JP) 2007-11-22 US disclosed
US-7297461-B2 Radiation sensitive resin composition JSR CORPORATION (JP) 2007-11-20 US disclosed
US-7288359-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2007-10-30 US disclosed
EP-1736829-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2006-12-27 EP disclosed
EP-1726608-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2006-11-29 EP disclosed
US-20060234153-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2006-10-19 US disclosed
US-7108955-B2 Polysiloxane, process for production thereof and radiation-sensitive resin composition JSR CORPORATION (JP) 2006-09-19 US disclosed
US-20050171226-A1 Radiation sensitive resin composition JSR CORPORATION (JP) 2005-08-04 US disclosed
EP-1557718-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2005-07-27 EP disclosed
US-20040143082-A1 Polysiloxane, process for production thereof and radiation-sensitive resin composition JSR CORPORATION (JP) 2004-07-22 US disclosed
EP-1398339-A1 POLYSILOXANE, PROCESS FOR PRODUCTION THEREOF AND RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2004-03-17 EP disclosed
US-20030219680-A1 Photoresists useful for microfabrication utilizing deep ultraviolet rays such as an excimer laser, x-rays such as synchrotron radiation, and electron beams JSR CORPORATION (JP) 2003-11-27 US disclosed
US-20030170561-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2003-09-11 US disclosed