SCHEMBL3157671

SCHEMBL3157671

O=S(=O)([O-])C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F.c1ccc2c([S+]3CCCC3)ccc(OC3CCCO3)c2c1

nearest known ligand 0.30

Predicted protein targets (top 1)

geneUniProtsupporting neighboursconfidence
PDE4B Q07343 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3164953 0.99 PDE4B (0.31) PDE4B
SCHEMBL3158957 0.97
SCHEMBL3158579 0.96
Trifluoromethanesulfonic Acid SCHEMBL648142 0.89 PDE4B (0.33) PDE4B
Trifluoromethanesulfonic Acid SCHEMBL646788 0.86 PDE4B (0.31) PDE4B
Trifluoromethanesulfonic Acid SCHEMBL6564088 0.83 PDE4B (0.32) PDE4B
SCHEMBL3873875 0.83 PDE4B (0.36) PDE4B
SCHEMBL704509 0.82 ALDH1A1 (0.33)
SCHEMBL702251 0.81 ALDH1A1 (0.33)
Trifluoromethanesulfonic Acid SCHEMBL6564015 0.81

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 22 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1225480-B1 Radiation-sensitive resin composition JSR CORP (JP) 2010-03-17 EP disclosed
US-7531286-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2009-05-12 US disclosed
US-7510817-B2 Photoresist polymer compositions JSR CORPORATION (JP) 2009-03-31 US disclosed
US-7314701-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2008-01-01 US disclosed
EP-1641848-B1 PHOTORESIST POLYMER COMPOSITIONS JSR CORP (JP) 2007-08-22 EP disclosed
US-7202016-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2007-04-10 US disclosed
US-20060257781-A1 Photoacid generator, and a polymer with units of 2-alkyladamantyl (meth)acrylate, 3-hydroxyadamantyl (meth)acrylate, 1-alkylcyclopentyl (meth)acrylate or 7-oxo-3,8-methano-6-oxabicyclo(3.2.1)octan-4-yl (meth)acrylate, made with a chain transfer agent; e.g. RAFT polymer; narrow polydispersity FREESLATE, INC. 2006-11-16 US disclosed
US-7105269-B2 Copolymer, polymer mixture, and radiation-sensitive resin composition JSR CORPORATION (JP) 2006-09-12 US disclosed
EP-1641849-A1 PHOTORESIST POLYMERS AND COMPOSITIONS HAVING ACRYLIC- OR METHACRYLIC-BASED POLYMERIC RESIN PREPARED BY A LIVING FREE RADICAL PROCESS Symyx Technologies, Inc. (US) 2006-04-05 EP disclosed
EP-1641848-A1 PHOTORESIST POLYMER COMPOSITIONS JSR Corporation (JP) 2006-04-05 EP disclosed
US-20050095527-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2005-05-05 US disclosed
WO-2005003198-A1 PHOTORESIST POLYMER COMPOSITIONS JSR CORPORATION (JP) 2005-01-13 WO disclosed
WO-2005000923-A1 PHOTORESIST POLYMERS AND COMPOSITIONS HAVING ACRYLIC- OR METHACRYLIC-BASED POLYMERIC RESIN PREPARED BY A LIVING FREE RADICAL PROCESS SYMYX TECHNOLOGIES, INC. (US) 2005-01-06 WO disclosed
US-6838225-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2005-01-04 US disclosed
US-20030203309-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2003-10-30 US disclosed
US-20030157423-A1 Copolymer, polymer mixture, and radiation-sensitive resin composition JSR CORPORATION (JP) 2003-08-21 US disclosed
US-20020132181-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2002-09-19 US disclosed
EP-1225480-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2002-07-24 EP disclosed
US-20020058201-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2002-05-16 US disclosed
EP-1193558-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2002-04-03 EP disclosed