SCHEMBL3883347

SCHEMBL3883347

COC(C)COCCC[Si](OC)(OC)OC

nearest known ligand 0.32

Predicted protein targets (top 7)

geneUniProtsupporting neighboursconfidence
LMNA P02545 1/20 0.32
LPAR6 P43657 3/20 0.31
LPAR1 Q92633 3/20 0.31
LPAR4 Q99677 3/20 0.31
LPAR5 Q9H1C0 3/20 0.31
LPAR2 Q9HBW0 3/20 0.31
LPAR3 Q9UBY5 3/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28445338 0.83 LMNA (0.33) LMNA
SCHEMBL3892349 0.83 LPAR6 (0.32) LPAR6LPAR1LPAR4LPAR5LPAR2
SCHEMBL3896454 0.82
SCHEMBL3896622 0.82
SCHEMBL16943602 0.80 HSD17B10 (0.48) LMNALPAR6LPAR1LPAR4LPAR5
SCHEMBL3899422 0.79
SCHEMBL14492914 0.79 TSHR (0.37)
SCHEMBL3882456 0.78 LPAR1 (0.44) LMNALPAR6LPAR1LPAR4LPAR5
SCHEMBL2759261 0.78 LMNA (0.34) LMNALPAR6LPAR1LPAR4LPAR5
SCHEMBL13978954 0.78 TDP1 (0.45) LPAR5

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7485690-B2 Sacrificial film-forming composition, patterning process, sacrificial film and removal method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-02-03 US claimed
US-7541134-B2 Antireflective film-forming composition, method for manufacturing the same, and antireflective film and pattern formation method using the same INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2009-06-02 US disclosed
US-7541134-B2 Antireflective film-forming composition, method for manufacturing the same, and antireflective film and pattern formation method using the same INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2009-06-02 US disclosed
US-7485690-B2 Sacrificial film-forming composition, patterning process, sacrificial film and removal method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-02-03 US disclosed
US-7485690-B2 Sacrificial film-forming composition, patterning process, sacrificial film and removal method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-02-03 US disclosed
US-7385021-B2 Sacrificial film-forming composition, patterning process, sacrificial film and removal method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-06-10 US disclosed
US-7385021-B2 Sacrificial film-forming composition, patterning process, sacrificial film and removal method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-06-10 US disclosed
EP-1798599-A1 Antireflection film composition, patterning process and substrate using the same Shinetsu Chemical Co., Ltd. (JP) 2007-06-20 EP disclosed
US-20070134916-A1 Antireflection film composition, patterning process and substrate using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-06-14 US disclosed
US-20050277058-A1 Antireflective film-forming composition, method for manufacturing the same, and antireflective film and pattern formation method using the same SHIN-ETSU CHEMICAL CO., LTD. 2005-12-15 US disclosed
US-20050274692-A1 Sacrificial film-forming composition, patterning process, sacrificial film and removal method SHIN-ETSU CHEMICAL CO., LTD. 2005-12-15 US disclosed
US-20050277755-A1 Sacrificial film-forming composition, patterning process, sacrificial film and removal method SHIN-ETSU CHEMICAL CO., LTD. 2005-12-15 US disclosed