SCHEMBL3883392

SCHEMBL3883392

CC[S+](CC)c1ccc(O)c2ccccc12

nearest known ligand 0.52

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
IDO1 P14902 13/20 0.52
EP300 Q09472 4/20 0.42
KAT2B Q92831 3/20 0.42
KAT8 Q9H7Z6 3/20 0.42
HDAC3 O15379 1/20 0.42
NCOR2 Q9Y618 1/20 0.42
CHEK1 O14757 1/20 0.39
PIM1 P11309 1/20 0.39
LTK P29376 1/20 0.39
LIMK1 P53667 1/20 0.39
CLK4 Q9HAZ1 1/20 0.39
LDHA P00338 1/20 0.37
CTSB P07858 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Trifluoromethanesulfonic Acid SCHEMBL2516940 0.83 MEN1 (0.39) IDO1EP300KAT2BKAT8LDHA
SCHEMBL12762160 0.82 IDO1 (0.45) IDO1EP300KAT2BKAT8HDAC3
SCHEMBL701579 0.78 CYP1A2 (0.54)
SCHEMBL3122221 0.77 PSD (0.34) IDO1EP300KAT2BKAT8LDHA
SCHEMBL12748736 0.77 IDO1 (0.59) IDO1EP300KAT2BKAT8HDAC3
SCHEMBL29420748 0.77 IDO1 (0.59) IDO1EP300KAT2BKAT8HDAC3
SCHEMBL132348 0.77 IDO1 (0.59) IDO1EP300KAT2BKAT8HDAC3
Hydrochloric Acid SCHEMBL4410534 0.75 IDO1 (0.56) IDO1EP300KAT2BKAT8HDAC3
SCHEMBL29638 0.72 IDO1 (1.00) IDO1EP300KAT2BKAT8HDAC3
SCHEMBL32677325 0.72 IDO1 (1.00) IDO1EP300KAT2BKAT8HDAC3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7638261-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2009-12-29 US disclosed
US-20090148790-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2009-06-11 US disclosed
US-7521169-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2009-04-21 US disclosed
US-20080187859-A1 Radiation-Sensitive Resin Composition JSR CORPORATION (JP) 2008-08-07 US disclosed
US-20070269735-A1 Radiation-Sensitive Resin Composition JSR CORPORATION (JP) 2007-11-22 US disclosed
US-7297461-B2 Radiation sensitive resin composition JSR CORPORATION (JP) 2007-11-20 US disclosed
US-7288359-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2007-10-30 US disclosed
EP-1736829-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2006-12-27 EP disclosed
EP-1726608-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2006-11-29 EP disclosed
US-20060234153-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2006-10-19 US disclosed
US-7108955-B2 Polysiloxane, process for production thereof and radiation-sensitive resin composition JSR CORPORATION (JP) 2006-09-19 US disclosed
US-20050171226-A1 Radiation sensitive resin composition JSR CORPORATION (JP) 2005-08-04 US disclosed
EP-1557718-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2005-07-27 EP disclosed
US-20040143082-A1 Polysiloxane, process for production thereof and radiation-sensitive resin composition JSR CORPORATION (JP) 2004-07-22 US disclosed
EP-1398339-A1 POLYSILOXANE, PROCESS FOR PRODUCTION THEREOF AND RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2004-03-17 EP disclosed
US-20040048192-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2004-03-11 US disclosed
US-20030219680-A1 Photoresists useful for microfabrication utilizing deep ultraviolet rays such as an excimer laser, x-rays such as synchrotron radiation, and electron beams JSR CORPORATION (JP) 2003-11-27 US disclosed
US-20030170561-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2003-09-11 US disclosed