SCHEMBL388725

SCHEMBL388725

[GeH4].[Ni]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Lithium SCHEMBL30139354 0.82
SCHEMBL29064920 0.82
SCHEMBL20003411 0.82
SCHEMBL8385727 0.82
SCHEMBL2888184 0.82
SCHEMBL8729828 0.82
SCHEMBL17686491 0.82
SCHEMBL907417 0.82
SCHEMBL21633776 0.82
SCHEMBL936745 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 947 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-114256444-B Phosphorus-nickel-germanium composite anode material, preparation method and application thereof 公元股份有限公司 2024-11-15 CN claimed
EP-3320562-B1 FORMULATIONS TO SELECTIVELY ETCH SILICON GERMANIUM RELATIVE TO GERMANIUM ENTEGRIS INC (US) 2024-08-28 EP claimed
CN-117687600-A True random number generator based on nickel-germanium Schottky junction and implementation method thereof 浙江大学 2024-03-12 CN claimed
CN-114990570-B Preparation method of nickel-germanium serpentine composite material and application of nickel-germanium serpentine composite material in electrocatalysis 广西晶联光电材料有限责任公司 2024-01-02 CN claimed
US-11777016-B2 Method of forming backside power rails TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2023-10-03 US claimed
CN-109841498-B Semiconductor device and method for manufacturing the same 爱思开海力士有限公司 2023-09-19 CN claimed
CN-116031265-B Photodetector integrated with solar cell and CMOS circuit and manufacturing method 上海铭锟半导体有限公司 2023-09-15 CN claimed
CN-116313757-A Method for doping shallow junction with medium-high N type germanium and application thereof 厦门理工学院 2023-06-23 CN claimed
CN-116031265-A Photodetector integrated with solar cell and CMOS circuit and manufacturing method 上海铭锟半导体有限公司 2023-04-28 CN claimed
US-20220336641-A1 Method of Forming Backside Power Rails TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2022-10-20 US claimed
US-20080311747-A1 METAL-GERMANIUM PHYSICAL VAPOR DEPOSITION FOR SEMICONDUCTOR DEVICE DEFECT REDUCTION TEXAS INSTRUMENTS INCORPORATED (US) 2008-12-18 US claimed
US-7435672-B2 Metal-germanium physical vapor deposition for semiconductor device defect reduction TEXAS INSTRUMENTS INCORPORATED (US) 2008-10-14 US claimed
US-20070187767-A1 SEMICONDUCTOR DEVICE INCLUDING MISFET KABUSHIKI KAISHA TOSHIBA 2007-08-16 US claimed
EP-1429884-B1 IMPROVED COMPOSITIONS, METHODS AND DEVICES FOR HIGH TEMPERATURE LEAD-FREE SOLDER HONEYWELL INT INC (US) 2006-06-21 EP claimed
US-20060024963-A1 Metal-germanium physical vapor deposition for semiconductor device defect reduction TEXAS INSTRUMENTS INCORPORATED (US) 2006-02-02 US claimed
US-20040178476-A1 Etching metal using sonication BRASK JUSTIN K (US) 2004-09-16 US claimed
US-6746967-B2 Etching metal using sonication INTEL CORPORATION 2004-06-08 US claimed
US-20040061199-A1 Etching metal using sonication INTEL CORPORATION 2004-04-01 US claimed
US-4619696-A Additive for metallurgical liquids, and method and device for the preparation thereof O.E.T. - METALCONSULT S.R.L. (IT) 1986-10-28 US claimed
EP-0146830-A2 Additive for metallurgical liquids, and method and device for the preparation thereof O.E.T.-METALCONSULT S.r.l. (IT) 1985-07-03 EP claimed