⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL27561010 | 0.87 | — | — | |
| SCHEMBL26969690 | 0.87 | — | — | |
| SCHEMBL25075 | 0.82 | — | — | |
| SCHEMBL428692 | 0.82 | — | — | |
| SCHEMBL3760803 | 0.82 | — | — | |
| SCHEMBL23709 | 0.82 | — | — | |
| SCHEMBL25073 | 0.82 | — | — | |
| SCHEMBL2010171 | 0.82 | — | — | |
| SCHEMBL430914 | 0.82 | — | — | |
| SCHEMBL427351 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 144 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-119300451-B | Switching device based on planar back-to-back nickel-silicon-germanium Schottky junction and preparation method | 浙江大学 | 2025-05-13 | — | — | CN | claimed |
| CN-119300451-A | Switching device based on planar back-to-back nickel-silicon-germanium Schottky junction and preparation method | 浙江大学 | 2025-01-10 | — | — | CN | claimed |
| CN-105762068-A | Semiconductor element and manufacturing method thereof | 联华电子股份有限公司 | 2016-07-13 | — | — | CN | claimed |
| US-9196472-B2 | Processing liquid for suppressing pattern collapse of fine metal structure, and method for producing fine metal structure using same | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2015-11-24 | — | — | US | claimed |
| CN-102484056-B | Treatment liquid for suppressing pattern collapse of fine metal structure, and method for producing fine metal structure using same | MITSUBISHI GAS CHEMICAL CO.,INC. (JP) | 2015-09-30 | — | — | CN | claimed |
| CN-102640264-B | Treatment solution for preventing pattern collapse in metal fine structure body, and process for production of metal fine structure body using same | MITSUBISHI GAS CHEMICAL CO | 2015-04-01 | — | — | CN | claimed |
| US-20120205345-A1 | TREATMENT SOLUTION FOR PREVENTING PATTERN COLLAPSE IN METAL FINE STRUCTURE BODY, AND PROCESS FOR PRODUCTION OF METAL FINE STRUCTURE BODY USING SAME | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2012-08-16 | — | — | US | claimed |
| CN-102640264-A | Treatment solution for preventing pattern collapse in metal fine structure body, and process for production of metal fine structure body using same | MITSUBISHI GAS CHEMICAL CO | 2012-08-15 | — | — | CN | claimed |
| US-20120135604-A1 | PROCESSING LIQUID FOR SUPPRESSING PATTERN COLLAPSE OF FINE METAL STRUCTURE, AND METHOD FOR PRODUCING FINE METAL STRUCTURE USING SAME | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2012-05-31 | — | — | US | claimed |
| CN-102484056-A | Treatment liquid for suppressing pattern collapse of fine metal structure, and method for producing fine metal structure using same | MITSUBISHI GAS CHEMICAL CO | 2012-05-30 | — | — | CN | claimed |
| CN-100557817-C | MOSFET with nickel germanosilicide gate and method of forming the same | ADVANCED MICRO DEVICES INC (US) | 2009-11-04 | — | — | CN | claimed |
| WO-2007112228-A1 | STRUCTURE AND FABRICATION METHOD OF A SELECTIVELY DEPOSITED CAPPING LAYER ON AN EPITAXIALLY GROWN SOURCE DRAIN | INTEL CORPORATION (US) | 2007-10-04 | — | — | WO | claimed |
| CN-115440594-B | Semiconductor device and method for manufacturing the same | 台湾积体电路制造股份有限公司 | 2026-05-12 | — | — | CN | disclosed |
| US-12432997-B2 | Method for forming an epitaxial layer with better quality | United Semiconductor (Xiamen) Co., Ltd. (CN) | 2025-09-30 | — | — | US | disclosed |
| CN-119300451-B | Switching device based on planar back-to-back nickel-silicon-germanium Schottky junction and preparation method | 浙江大学 | 2025-05-13 | — | — | CN | disclosed |
| CN-119300451-A | Switching device based on planar back-to-back nickel-silicon-germanium Schottky junction and preparation method | 浙江大学 | 2025-01-10 | — | — | CN | disclosed |
| US-20050130454-A1 | METHOD FOR IMPROVING TRANSISTOR PERFORMANCE THROUGH REDUCING THE SALICIDE INTERFACE RESISTANCE | INTEL CORPORATION | 2005-06-16 | — | — | US | disclosed |
| US-6787864-B2 | Mosfets incorporating nickel germanosilicided gate and methods for their formation | ADVANCED MICRO DEVICES, INC. | 2004-09-07 | — | — | US | disclosed |
| WO-2004038807-A1 | MOSFETS INCORPORATING NICKEL GERMANOSILICIDED GATE AND METHODS OF THEIR FORMATION | ADVANCED MICRO DEVICES, INC. (US) | 2004-05-06 | — | — | WO | disclosed |
| US-20040061191-A1 | Mosfets incorporating nickel germanosilicided gate and methods for their formation | ADVANCED MICRO DEVICES, INC. | 2004-04-01 | — | — | US | disclosed |