⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3746082 | 0.87 | — | — | |
| SCHEMBL28262657 | 0.82 | — | — | |
| SCHEMBL27508350 | 0.82 | — | — | |
| SCHEMBL560633 | 0.82 | — | — | |
| SCHEMBL131184 | 0.82 | — | — | |
| SCHEMBL344183 | 0.82 | — | — | |
| SCHEMBL6752601 | 0.67 | — | — | |
| SCHEMBL12802731 | 0.67 | — | — | |
| SCHEMBL5396004 | 0.67 | — | — | |
| SCHEMBL338149 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 114 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-116902926-A | Bismuth doped Sb 2 Te 3 Method for preparing thermoelectric material | 六盘水师范学院 | 2023-10-20 | — | — | CN | claimed |
| CN-116516308-A | Bismuth-antimony-tellurium alloy target and preparation method thereof | 先导薄膜材料（广东）有限公司 | 2023-08-01 | — | — | CN | claimed |
| CN-107665947-B | Variable resistance memory device | 三星电子株式会社 | 2022-06-21 | — | — | CN | claimed |
| CN-107123734-B | Variable resistance memory device | 三星电子株式会社 | 2022-05-10 | — | — | CN | claimed |
| CN-107732007-B | Variable resistance memory device and method of manufacturing the same | 三星电子株式会社 | 2021-05-04 | — | — | CN | claimed |
| CN-112694070-A | Composite thermoelectric material and preparation method thereof | 中国科学院宁波材料技术与工程研究所 | 2021-04-23 | — | — | CN | claimed |
| CN-112430093-A | Preparation method of bismuth antimony tellurium alloy target | 先导薄膜材料（广东）有限公司 | 2021-03-02 | — | — | CN | claimed |
| US-10468594-B2 | Variable resistance memory devices | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2019-11-05 | — | — | US | claimed |
| US-10388867-B2 | Variable resistance memory devices | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2019-08-20 | — | — | US | claimed |
| US-10236444-B2 | Variable resistance memory device and method of manufacturing the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2019-03-19 | — | — | US | claimed |
| US-10062841-B2 | Memory device and method of manufacturing the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2018-08-28 | — | — | US | claimed |
| CN-107732007-A | Variable resistance memory device and its manufacture method | 三星电子株式会社 | 2018-02-23 | — | — | CN | claimed |
| US-20180047899-A1 | VARIABLE RESISTANCE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2018-02-15 | — | — | US | claimed |
| CN-107665947-A | Variable resistance memory device | 三星电子株式会社 | 2018-02-06 | — | — | CN | claimed |
| US-20170288138-A1 | VARIABLE RESISTANCE MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2017-10-05 | — | — | US | claimed |
| CN-107123734-A | Variable resistance memory device | 三星电子株式会社 | 2017-09-01 | — | — | CN | claimed |
| US-20170250222-A1 | VARIABLE RESISTANCE MEMORY DEVICES | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2017-08-31 | — | — | US | claimed |
| US-20170244030-A1 | MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2017-08-24 | — | — | US | claimed |
| CN-101803050-A | Method for high quality factor in nanostructured thermoelectric materials | MASSACHUSETTS INST TECHNOLOGY | 2010-08-11 | — | — | CN | claimed |
| US-20080202575-A1 | METHODS FOR HIGH FIGURE-OF-MERIT IN NANOSTRUCTURED THERMOELECTRIC MATERIALS | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (MIT) (US) | 2008-08-28 | — | — | US | claimed |