SCHEMBL560633

SCHEMBL560633

[SbH3].[TeH]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL887625 0.82
SCHEMBL15390446 0.82
SCHEMBL338149 0.82
SCHEMBL560999 0.82
SCHEMBL3889677 0.82
SCHEMBL61895 0.82
SCHEMBL887806 0.82
SCHEMBL15481 0.71
SCHEMBL1394590 0.71
SCHEMBL6092959 0.71

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 379 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12501628-B2 Memory comprising conductive ferroelectric material in series with dielectric material INTEL CORPORATION (US) 2025-12-16 US claimed
CN-118957264-A Method for removing antimony and tellurium in anode mud through multistage pressurization and chlorine-free removal 江西铜业集团(贵溪)冶化新技术有限公司 2024-11-15 CN claimed
CN-116789084-B Antimony tellurium heterojunction material, preparation method and application thereof 山东泰和科技股份有限公司 2024-08-06 CN claimed
CN-115696011-B Phase change material-based electrically controllable color filter array and artificial vision system 华中科技大学 2024-05-14 CN claimed
CN-116789084-A Antimony tellurium heterojunction material, preparation method and application thereof 山东泰和科技股份有限公司 2023-09-22 CN claimed
CN-116746295-A Phase change memory and method of manufacturing the same 华为技术有限公司 2023-09-12 CN claimed
CN-116626992-A Phase-change color photoresist and preparation method of pixelated color filter thereof 华中科技大学 2023-08-22 CN claimed
CN-113096706-B CPU and manufacturing method thereof 长江先进存储产业创新中心有限责任公司 2023-06-16 CN claimed
CN-116113311-A Phase change memory and preparation method thereof 中国科学院上海微系统与信息技术研究所 2023-05-12 CN claimed
US-20230147275-A1 MEMORY COMPRISING CONDUCTIVE FERROELECTRIC MATERIAL IN SERIES WITH DIELECTRIC MATERIAL INTEL CORPORATION (US) 2023-05-11 US claimed
CN-101665916-A Method for preparing sputtering target of phase-change material SHANGHAI INST MICROSYS & INF 2010-03-10 CN claimed
CN-101660119-A Compound phase-change material target and preparation method thereof SHANGHAI INST MICROSYS & INF 2010-03-03 CN claimed
CN-101660118-A Nanometer composite phase-change material, preparation and application thereof SHANGHAI INST MICROSYS & INF 2010-03-03 CN claimed
CN-101521260-A Nano composite phase-change material and preparation method thereof SHANGHAI INST MICROSYS & INF 2009-09-02 CN claimed
CN-101409327-A Resistive memory structure with buffer layer MACRONIX INT CO LTD (CN) 2009-04-15 CN claimed
CN-101299453-A Nano composite phase-changing material and preparation method thereof SHANGHAI INST MICROSYS & INF (CN) 2008-11-05 CN claimed
CN-101201481-A Display device YINGYEDA CO LTD (CN) 2008-06-18 CN claimed
CN-101110237-A Optical information storage medium PRODISC TECHNOLOGY INC (CN) 2008-01-23 CN claimed
EP-0128984-B1 PROCESS FOR THE PRODUCTION OF PARA-VINYL PHENOL BY DEHYDROGENATION OF PARA-ETHYL PHENOL MARUZEN PETROCHEMICAL CO., LTD. (JP) 1986-12-30 EP claimed
US-4576634-A Process for the preparation of chalcogenide alloys XEROX CORPORATION (US) 1986-03-18 US claimed