SCHEMBL3915959

SCHEMBL3915959

CCCCCCCCCCCCCCC=CCC1=NC(CC)(CO)CO1

nearest known ligand 0.42

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
PRKCA P17252 13/20 0.35
TRPV1 Q8NER1 1/20 0.33
GMNN O75496 1/20 0.33
USP2 O75604 1/20 0.33
LMNA P02545 1/20 0.33
CYP1A2 P05177 1/20 0.33
POLB P06746 1/20 0.33
MAPT P10636 1/20 0.33
CYP2C9 P11712 1/20 0.33
ALOX15 P16050 1/20 0.33
APEX1 P27695 1/20 0.33
CYP2C19 P33261 1/20 0.33
RECQL P46063 1/20 0.33
BLM P54132 1/20 0.33
NPSR1 Q6W5P4 1/20 0.33
HSD17B10 Q99714 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL322644 0.89 EPHX2 (0.38) PRKCA
SCHEMBL16666208 0.89 EPHX2 (0.38) PRKCA
SCHEMBL29540037 0.83 EPHX2 (0.39) PRKCATRPV1
SCHEMBL9414401 0.83 EPHX2 (0.39) PRKCATRPV1
SCHEMBL9848775 0.83 EPHX2 (0.39) PRKCATRPV1
SCHEMBL9414404 0.83 EPHX2 (0.39) PRKCATRPV1
SCHEMBL11210120 0.82 PRKCA (0.36) PRKCATRPV1
SCHEMBL7744012 0.81 PRKCA (0.33) PRKCA
SCHEMBL7744010 0.81 PRKCA (0.33) PRKCA
SCHEMBL6682873 0.80 PRKCA (0.35) PRKCALMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 32 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-0896042-B1 A polishing composition including an inhibitor of tungsten etching CABOT MICROELECTRONICS CORP (US) 2005-02-09 EP claimed
US-6136711-A CHEMICAL MECHANICAL POLISHING MIXTURE COMPRISING A STABILIZER TO MINIMIZE ETCHING AND CORROSION CABOT CORPORATION (US) 2000-10-24 US claimed
EP-0896042-A1 A polishing composition including an inhibitor of tungsten etching Cabot Corporation (US) 1999-02-10 EP claimed
WO-1999005706-A1 A POLISHING COMPOSITION INCLUDING AN INHIBITOR OF TUNGSTEN ETCHING CABOT CORPORATION (US) 1999-02-04 WO claimed
EP-2038361-A1 TUNABLE SELECTIVITY SLURRIES IN CMP APPLICATIONS Cabot Microelectronics Corporation (US) 2009-03-25 EP disclosed
US-20090008600-A1 METHOD AND COMPOSITION FOR POLISHING A SUBSTRATE APPLIED MATERIALS, INC. 2009-01-08 US disclosed
US-7390744-B2 Method and composition for polishing a substrate APPLIED MATERIALS, INC. (US) 2008-06-24 US disclosed
US-20080035882-A1 COMPOSITION FOR POLISHING A SUBSTRATE APPLIED MATERIALS, INC. 2008-02-14 US disclosed
WO-2008005160-A1 TUNABLE SELECTIVITY SLURRIES IN CMP APPLICATIONS CABOT MICROELECTRONICS CORPORATION (US) 2008-01-10 WO disclosed
US-7294576-B1 Tunable selectivity slurries in CMP applications CABOT MICROELECTRONICS CORPORATION (US) 2007-11-13 US disclosed
US-20060196778-A1 Tungsten electroprocessing APPLIED MATERIALS, INC. 2006-09-07 US disclosed
WO-2006086265-A2 METHOD AND COMPOSITION FOR POLISHING A SUBSTRATE APPLIED MATERIALS, INC. (US) 2006-08-17 WO disclosed
US-6083419-A FOR SEMICONDUCTORS CABOT CORPORATION (US) 2000-07-04 US disclosed
EP-0896042-A1 A polishing composition including an inhibitor of tungsten etching Cabot Corporation (US) 1999-02-10 EP disclosed
WO-1999005706-A1 A POLISHING COMPOSITION INCLUDING AN INHIBITOR OF TUNGSTEN ETCHING CABOT CORPORATION (US) 1999-02-04 WO disclosed
EP-0170939-B1 ELECTROVISCOUS FLUIDS BAYER AG (DE) 1988-07-20 EP disclosed
US-4668417-A Electroviscous fluids BAYER AKTIENGESELLSCHAFT (DE) 1987-05-26 US disclosed
US-4645614-A SILICA-GEL, SILICONE OIL, AND POLYSILOXANES BAYER AKTIENGESELLSCHAFT (DE) 1987-02-24 US disclosed
EP-0201827-A2 Electroviscous fluids BAYER AG (DE) 1986-11-20 EP disclosed
EP-0170939-A1 Electroviscous fluids BAYER AG (DE) 1986-02-12 EP disclosed