SCHEMBL392224

SCHEMBL392224

CCOC(C)(N)CO

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2370591 0.77
Tert-Butylamine SCHEMBL27972364 0.74
SCHEMBL8924714 0.74 MEN1 (0.35)
SCHEMBL21473976 0.74 MEN1 (0.30)
SCHEMBL27876759 0.74 MEN1 (0.30)
SCHEMBL2496092 0.72
SCHEMBL27752639 0.72
SCHEMBL10891865 0.71
SCHEMBL21468437 0.71
SCHEMBL198740 0.71

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 174 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12298669-B2 Composition comprising three alkanolamines and a hydroxylamine for removing etch residues VERSUM MATERIALS US, LLC (US) 2025-05-13 US claimed
CN-114450388-B Composition for removing etching residues, and use method and application thereof 弗萨姆材料美国有限责任公司 2025-03-21 CN claimed
US-20220380705-A1 Composition For Removing Etch Residues, Methods Of Using And Use Thereof VERSUM MATERIALS US, LLC (US) 2022-12-01 US claimed
EP-4034629-A1 COMPOSITIONS FOR REMOVING ETCH RESIDUES, METHODS OF USING AND USE THEREOF Versum Materials US, LLC (US) 2022-08-03 EP claimed
CN-113589662-B Composition, stripping liquid, application of stripping liquid in stripping of photoresist or photoresist residues and stripping method 浙江奥首材料科技有限公司 2022-07-12 CN claimed
EP-3999621-A1 COMPOSITIONS FOR REMOVING ETCH RESIDUES, METHODS OF USING AND USE THEREOF Versum Materials US, LLC (US) 2022-05-25 EP claimed
CN-114450388-A Composition for removing etching residues, and use method and application thereof 弗萨姆材料美国有限责任公司 2022-05-06 CN claimed
CN-114127230-A Composition for removing etching residues, method for using same and use thereof 弗萨姆材料美国有限责任公司 2022-03-01 CN claimed
CN-113589662-A Composition, stripping liquid, application of stripping liquid in stripping of photoresist or photoresist residues and stripping method 浙江奥首材料科技有限公司 2021-11-02 CN claimed
WO-2021061922-A1 COMPOSITIONS FOR REMOVING ETCH RESIDUES, METHODS OF USING AND USE THEREOF VERSUM MATERIALS US, LLC (US) 2021-04-01 WO claimed
US-20040106530-A1 Inhibition of titanium corrosion DAVIOT JEROME (GB) 2004-06-03 US claimed
EP-1273033-A1 INHIBITION OF TITANIUM CORROSION EKC Technology, Ltd (GB) 2003-01-08 EP claimed
US-6492311-B2 REMOVING PHOTORESIST RESIDUE; DOES NOT CORRODE OR ATTACK TITANIUM OR OTHER METALLURGY, OXIDE OR NITRIDE LAYERS ON THE SUBSTRATE EKC TECHNOLOGY, INC. 2002-12-10 US claimed
US-6480371-B1 Alkanolamine-phosphoric acid anodizing electrolyte KEMET ELECTRONICS CORPORATION 2002-11-12 US claimed
US-6367486-B1 REMOVES PHOTORESIST AND OTHER RESIDUE FROM INTEGRATED CIRCUIT SUBSTRATES. EKC TECHNOLOGY, INC. 2002-04-09 US claimed
WO-2001078129-A1 INHIBITION OF TITANIUM CORROSION EKC TECHNOLOGY, LTD. (GB) 2001-10-18 WO claimed
WO-2001057292-A1 ALKANOLAMINE-PHOSPHORIC ACID ANODIZING ELECTROLYTE KEMET ELECTRONICS CORPORATION (US) 2001-08-09 WO claimed
US-6221818-B1 Hydroxylamine-gallic compound composition and process EKC TECHNOLOGY, INC. 2001-04-24 US claimed
US-6187730-B1 REMOVING PHOTORESIST OR OTHER POLYMERIC MATERIAL OR A RESIDUE FROM A SUBSTRATE, SUCH AS AN INTEGRATED CIRCUIT SEMICONDUCTOR WAFER INCLUDING TITANIUM METALLURGY EKC TECHNOLOGY, INC. 2001-02-13 US claimed
WO-2000022662-A1 INHIBITION OF TITANIUM CORROSION EKC TECHNOLOGY, LTD (GB) 2000-04-20 WO claimed