SCHEMBL3949047

SCHEMBL3949047

O=C(c1cccc(Br)c1)c1ccccc1C(=O)c1ccccc1C(=O)c1cccc(Br)c1

nearest known ligand 0.57

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
PARP1 P09874 1/20 0.57
NPC1 O15118 3/20 0.54
MAPT P10636 4/20 0.54
MEN1 O00255 2/20 0.54
KMT2A Q03164 2/20 0.54
TDP1 Q9NUW8 2/20 0.54
L3MBTL1 Q9Y468 2/20 0.54
GAA P10253 1/20 0.54
POLB P06746 2/20 0.53
ALDH1A1 P00352 2/20 0.52
HTT P42858 1/20 0.52
AKR1C3 P42330 2/20 0.52
RAB9A P51151 2/20 0.51
GSTA1 P08263 1/20 0.50
MAOA P21397 1/20 0.50
MAOB P27338 1/20 0.50
TP53 P04637 1/20 0.50
BCHE P06276 1/20 0.49
SLC6A3 Q01959 1/20 0.49
SMN1; SMN2 Q16637 1/20 0.49

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3842568 0.92 AKR1C3 (0.58) PARP1NPC1MAPTMEN1KMT2A
SCHEMBL8244875 0.91 AKR1C3 (0.66) PARP1NPC1MAPTMEN1KMT2A
SCHEMBL21463006 0.89 PARP1 (0.53) PARP1NPC1MAPTMEN1KMT2A
SCHEMBL20546917 0.85 RXFP1 (0.51) PARP1NPC1MAPTMEN1KMT2A
SCHEMBL28879955 0.85 MAPT (0.61) PARP1NPC1MAPTMEN1KMT2A
SCHEMBL16624705 0.85 MAPT (0.65) PARP1NPC1MAPTMEN1KMT2A
SCHEMBL30153175 0.85 PARP1 (0.68) PARP1NPC1MAPTMEN1KMT2A
SCHEMBL241785 0.85 PARP1 (0.68) PARP1NPC1MAPTMEN1KMT2A
SCHEMBL40538 0.83 ATM (0.71) PARP1NPC1MAPTTDP1L3MBTL1
Hydrochloric Acid SCHEMBL27869733 0.83 PARP1 (0.65) PARP1NPC1MAPTMEN1KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6884862-B2 Polymer, process for production, composition for film formation containing the same, method of film formation, and insulating film JSR CORPORATION (JP) 2005-04-26 US claimed
US-7556860-B2 Laminate and method of forming the same, insulating film, and semiconductor device JSR CORPORATION (JP) 2009-07-07 US disclosed
EP-1298176-B1 Stacked film insulating film and substrate for semiconductor JSR CORP (JP) 2007-01-03 EP disclosed
US-20060216531-A1 Laminate and method of forming the same, insulating film, and semiconductor device JSR CORPORATION (JP) 2006-09-28 US disclosed
US-20060210812-A1 Insulating film and method of forming the same JSR CORPORATION (JP) 2006-09-21 US disclosed
EP-1696478-A1 INSULATING FILM, METHOD FOR FORMING SAME AND COMPOSITION FOR FORMING FILM JSR Corporation (JP) 2006-08-30 EP disclosed
EP-1679184-A1 LAMINATE AND METHOD FOR FORMATION THEREOF, INSULATING FILM, SEMICONDUCTOR DEVICE, AND COMPOSITION FOR FORMING FILM JSR Corporation (JP) 2006-07-12 EP disclosed
US-6884862-B2 Polymer, process for production, composition for film formation containing the same, method of film formation, and insulating film JSR CORPORATION (JP) 2005-04-26 US disclosed
US-6824833-B2 STACKED DIELECTRIC JSR CORPORATION (JP) 2004-11-30 US disclosed
EP-1254917-B1 Polymer comprising acetylene repeating units, process for the production, composition for film formation containing the same, method of film formation and insulating film JSR CORP (JP) 2004-06-30 EP disclosed
US-20030077461-A1 Stacked film, insulating film and substrate for semiconductor JSR CORPORATION (JP) 2003-04-24 US disclosed
EP-1298176-A2 Stacked film insulating film and substrate for semiconductor JSR Corporation (JP) 2003-04-02 EP disclosed
EP-1254917-A1 Polymer comprising acetylene repeating units, process for the production, composition for film formation containing the same, method of film formation and insulating film JSR Corporation (JP) 2002-11-06 EP disclosed
US-20020161173-A1 Polymer, process for production, composition for film formation containing the same, method of film formation, and insulating film JSR CORPORATION (JP) 2002-10-31 US disclosed