Hydrochloric Acid

Hydrochloric Acid

SCHEMBL395072

CC(C)(C)C1=C([Ti+2]C2=C(C(C)(C)C)C=CC2)CC=C1.[Cl-].[Cl-]

nearest known ligand 0.00

Full drug profile on Sugi Atlas →

Known targets — ChEMBL curated mechanism

ACHEBDKRB2CHRM1CHRM2CHRM3CHRNA1CHRNB1CHRNDCHRNECHRNGGUCY1A1GUCY1A2GUCY1B1GUCY1B2NAMPTPTAFRSLC10A2SLC6A2SLC6A3TACR1dacAdacBdacCftsImrcAmrcBmrdA

The experimentally established mechanism targets of Hydrochloric Acid. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4576031 0.95
SCHEMBL4577114 0.79
Hydrochloric Acid SCHEMBL6912160 0.74
SCHEMBL4577491 0.73
Hydrochloric Acid SCHEMBL7951615 0.70
Hydrochloric Acid SCHEMBL7197770 0.70
Hydrochloric Acid SCHEMBL2565045 0.70
Hydrochloric Acid SCHEMBL393956 0.69
SCHEMBL5852485 0.69
SCHEMBL2870650 0.69

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 203 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-118852495-A Supported catalyst and preparation and application thereof 上海化工研究院有限公司 2024-10-29 CN claimed
EP-4237373-A1 MODIFIED CARBON-BASED MATERIALS Yissum Research Development Company of the Hebrew University of Jerusalem Ltd. (IL) 2023-09-06 EP claimed
CN-116535548-A Catalyst composition and preparation method and application thereof 上海立得催化剂有限公司 2023-08-04 CN claimed
WO-2022091105-A1 MODIFIED CARBON-BASED MATERIALS YISSUM RESEARCH DEVELOPMENT COMPANY OF THE HEBREW UNIVERSITY OF JERUSALEM LTD. (IL) 2022-05-05 WO claimed
CN-112645971-B Method for directly preparing alkyl borate compound from alkyl halide 中国科学院兰州化学物理研究所 2021-12-24 CN claimed
CN-112645971-A Method for directly preparing alkyl borate compound from alkyl halide 中国科学院兰州化学物理研究所 2021-04-13 CN claimed
EP-2834309-A2 HYBRID METAL AND METAL OXIDE LAYERS WITH ENHANCED ACTIVITY Yissum Research and Development Company of The Hebrew University of Jerusalem (IL) 2015-02-11 EP claimed
WO-2013150533-A2 HYBRID METAL AND METAL OXIDE LAYERS WITH ENHANCED ACTIVITY YISSUM RESEARCH DEVELOPMENT COMPANY OF THE HEBREW UNIVERSITY OF JERUSALEM LTD. (IL) 2013-10-10 WO claimed
US-8395146-B2 Composition and organic insulating film prepared using the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2013-03-12 US claimed
US-8153267-B2 Composition and organic insulator prepared using the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2012-04-10 US claimed
US-20070129473-A1 Organic insulator composition, organic insulating film having the same, organic thin film transistor having the same and electronic device having the same and methods of forming the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2007-06-07 US claimed
US-20060147715-A1 Composition for preparing organic insulator SAMSUNG ELECTRONICS CO., LTD. (KR) 2006-07-06 US claimed
US-7005674-B2 Organic thin film transistor comprising multi-layered gate insulator SAMSUNG ELECTRONICS CO., LTD. (KR) 2006-02-28 US claimed
US-20060041096-A1 Organic-inorganic metal hybrid material and composition for producing organic insulator comprising the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2006-02-23 US claimed
US-20050259212-A1 Composition for preparing organic insulator SAMSUNG ELECTRONICS CO., LTD. (KR) 2005-11-24 US claimed
EP-1524299-A1 Composition for preparing organic insulator Samsung Electronics Co., Ltd (KR) 2005-04-20 EP claimed
US-20050001210-A1 Organic thin film transistor comprising multi-layered gate insulator SAMSUNG ELECTRONICS CO., LTD. (KR) 2005-01-06 US claimed
EP-1494298-A2 Organic thin film transistor comprising multi-layered gate insulator Samsung Electronics Co., Ltd. (KR) 2005-01-05 EP claimed
US-6436605-B1 Plasma resistant composition and use thereof INTERNATIONAL BUSINESS MACHINES CORPORATION 2002-08-20 US claimed
EP-1153905-A1 NOVEL CRYSTALLINE ION-ASSOCIATION SUBSTANCE, PROCESS FOR PRODUCING THE SAME, AND POLYMERIZATION INITIATOR AUTEX, INC. (JP) 2001-11-14 EP claimed