SCHEMBL3954684

SCHEMBL3954684

CCO[Si](C#Cc1ccccc1C#C[Si](OCC)(OCC)OCC)(OCC)OCC

nearest known ligand 0.32

Predicted protein targets (top 1)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL21853738 0.84 GRM5 (0.42) ALDH1A1
SCHEMBL1638771 0.83 KDM4E (0.32) ALDH1A1
SCHEMBL6562820 0.82 APP (0.42) ALDH1A1
SCHEMBL14299203 0.81 NQO1 (0.32) ALDH1A1
SCHEMBL3947886 0.78 NQO1 (0.33)
SCHEMBL3946394 0.76 GRM5 (0.35)
SCHEMBL1639958 0.76 GRM5 (0.32) ALDH1A1
SCHEMBL6564378 0.75 APP (0.39) ALDH1A1
SCHEMBL649636 0.74 NQO1 (0.35) ALDH1A1
SCHEMBL14299202 0.73 NR1I2 (0.35) ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-103894153-A Method for preparing organosilicone hollow-sphere adsorption material HULUDAO DESIGN INST OF CNPC NORTHEAST REFINING & CHEMICAL ENGINEERING CO LTD 2014-07-02 CN disclosed
CN-102806071-A Material for hollow nano organosilicon sphere and preparation method of material UNIV CHANGZHOU 2012-12-05 CN disclosed
US-7556860-B2 Laminate and method of forming the same, insulating film, and semiconductor device JSR CORPORATION (JP) 2009-07-07 US disclosed
US-20060216531-A1 Laminate and method of forming the same, insulating film, and semiconductor device JSR CORPORATION (JP) 2006-09-28 US disclosed
EP-1679184-A1 LAMINATE AND METHOD FOR FORMATION THEREOF, INSULATING FILM, SEMICONDUCTOR DEVICE, AND COMPOSITION FOR FORMING FILM JSR Corporation (JP) 2006-07-12 EP disclosed