SCHEMBL3957751

SCHEMBL3957751

C[Si](C)(C)C1C=CCC=C1

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8591217 0.87
SCHEMBL8591214 0.87
SCHEMBL17973983 0.75
SCHEMBL3960622 0.73
SCHEMBL545863 0.69
SCHEMBL16550636 0.69
SCHEMBL17973985 0.69
SCHEMBL8587778 0.68
SCHEMBL8587782 0.68
SCHEMBL911171 0.62

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 43 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12448681-B2 Methods of forming molybdenum-containing films deposited on elemental metal films MERCK PATENT GMBH (DE) 2025-10-21 US claimed
EP-3642385-B1 METHODS OF ATOMIC LAYER DEPOSITION FOR SELECTIVE FILM GROWTH MERCK PATENT GMBH (DE) 2024-07-31 EP claimed
CN-111032908-B Atomic layer deposition method for selective film growth 默克专利有限公司 2024-01-30 CN claimed
CN-116377420-A Atomic layer deposition method for selective film growth 默克专利有限公司 2023-07-04 CN claimed
US-20230203645-A1 Methods Of Forming Molybdenum-Containing Films Deposited On Elemental Metal Films MERCK PATENT GMBH (DE) 2023-06-29 US claimed
CN-115667575-A Method of forming molybdenum-containing film deposited on elemental metal film 默克专利有限公司 2023-01-31 CN claimed
US-11230764-B2 Methods of atomic layer deposition for selective film growth MERCK PATENT GMBH (DE) 2022-01-25 US claimed
WO-2021239596-A1 METHODS OF FORMING MOLYBDENUM-CONTAINING FILMS DEPOSITED ON ELEMENTAL METAL FILMS MERCK PATENT GMBH (DE) 2021-12-02 WO claimed
US-20200283894-A1 Methods Of Atomic Layer Deposition For Selective Film Growth MERCK PATENT GMBH (DE) 2020-09-10 US claimed
EP-3642385-A1 METHODS OF ATOMIC LAYER DEPOSITION FOR SELECTIVE FILM GROWTH Merck Patent GmbH (DE) 2020-04-29 EP claimed
CN-111032908-A Atomic layer deposition method for selective film growth 默克专利有限公司 2020-04-17 CN claimed
US-12448681-B2 Methods of forming molybdenum-containing films deposited on elemental metal films MERCK PATENT GMBH (DE) 2025-10-21 US disclosed
EP-3642385-B1 METHODS OF ATOMIC LAYER DEPOSITION FOR SELECTIVE FILM GROWTH MERCK PATENT GMBH (DE) 2024-07-31 EP disclosed
US-11912731-B2 Use of silylated formiates as hydrosilane equivalents COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (FR) 2024-02-27 US disclosed
US-11912731-B2 Use of silylated formiates as hydrosilane equivalents COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (FR) 2024-02-27 US disclosed
EP-2845857-A1 Use of cyclohexa-2,5-dien-1-yl-silanes as precursors for gaseous hydrosilanes Technische Universität Berlin (DE) 2015-03-11 EP disclosed
US-7572928-B2 Fluorination process ISIS INNOVATION LIMITED (GB) 2009-08-11 US disclosed
US-7572928-B2 Fluorination process ISIS INNOVATION LIMITED (GB) 2009-08-11 US disclosed
US-20070142632-A1 Fluorination process ISIS INNOVATION LIMITED (GB) 2007-06-21 US disclosed
US-20070142632-A1 Fluorination process ISIS INNOVATION LIMITED (GB) 2007-06-21 US disclosed