⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2219027 | 0.87 | — | — | |
| SCHEMBL11610913 | 0.87 | — | — | |
| SCHEMBL165432 | 0.87 | — | — | |
| SCHEMBL2130546 | 0.87 | — | — | |
| Charcoal, Activated SCHEMBL6363922 | 0.75 | — | — | |
| SCHEMBL15861907 | 0.75 | — | — | |
| SCHEMBL149910 | 0.75 | — | — | |
| SCHEMBL996453 | 0.75 | — | — | |
| SCHEMBL19439541 | 0.75 | — | — | |
| SCHEMBL10325271 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-7488640-B2 | Aluminum nitride and aluminum oxide/aluminum nitride heterostructure gate dielectric stack based field effect transistors and method for forming same | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2009-02-10 | — | — | US | disclosed |
| US-20050087821-A1 | Aluminum nitride and aluminum oxide/aluminum nitride heterostructure gate dielectric stack based field effect transistors and method for forming same | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2005-04-28 | — | — | US | disclosed |
| US-6831339-B2 | Aluminum nitride and aluminum oxide/aluminum nitride heterostructure gate dielectric stack based field effect transistors and method for forming same | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2004-12-14 | — | — | US | disclosed |
| US-20020090773-A1 | Aluminum nitride and aluminum oxide/aluminum nitride heterostructure gate dielectric stack based field effect transistors and method for forming same | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2002-07-11 | — | — | US | disclosed |