Trifluoromethanesulfonic Acid

Trifluoromethanesulfonic Acid

SCHEMBL3962867

F[S+](F)F.O=S(=O)([O-])C(F)(F)F

nearest known ligand 0.39

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Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
GPR3 P46089 1/20 0.39
CA1 P00915 2/20 0.39
CA2 P00918 2/20 0.39
CA7 P43166 1/20 0.39
CA13 Q8N1Q1 1/20 0.39
ACHE P22303 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Trifluoromethanesulfonic Acid SCHEMBL875150 0.85 CA1 (0.44) GPR3CA1CA2CA7CA13
Trifluoromethanesulfonic Acid SCHEMBL25292878 0.85 CA1 (0.44) GPR3CA1CA2CA7CA13
Trifluoromethanesulfonic Acid SCHEMBL5595336 0.85 CA1 (0.44) GPR3CA1CA2CA7CA13
Trifluoromethanesulfonic Acid SCHEMBL25287606 0.85 CA1 (0.44) GPR3CA1CA2CA7CA13
Trifluoromethanesulfonic Acid SCHEMBL23430060 0.85 CA1 (0.44) GPR3CA1CA2CA7CA13
Trifluoromethanesulfonic Acid SCHEMBL25255863 0.85 CA1 (0.44) GPR3CA1CA2CA7CA13
Trifluoromethanesulfonic Acid SCHEMBL25285896 0.85 CA1 (0.44) GPR3CA1CA2CA7CA13
Trifluoromethanesulfonic Acid SCHEMBL25301943 0.85 CA1 (0.44) GPR3CA1CA2CA7CA13
Trifluoromethanesulfonic Acid SCHEMBL20570425 0.85
Trifluoromethanesulfonic Acid SCHEMBL25292546 0.85 GPR3 (0.48) GPR3CA1CA2CA7CA13

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20090186484-A1 PATTERN FORMATION METHOD PANASONIC CORPORATION (JP) 2009-07-23 US disclosed
US-7524772-B2 Pattern formation method PANASONIC CORPORATION (JP) 2009-04-28 US disclosed
US-20070128558-A1 Pattern formation method and exposure system MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2007-06-07 US disclosed
US-7094521-B2 Pattern formation method and exposure system MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2006-08-22 US disclosed
US-20060160032-A1 Pattern formation method and exposure system MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2006-07-20 US disclosed
US-20060040215-A1 Amplification; exposure to radiation while aqueous solution of triphenylsulfonium nonaflate MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2006-02-23 US disclosed
US-6992015-B2 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2006-01-31 US disclosed
US-20040224525-A1 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-11-11 US disclosed