SCHEMBL397012

SCHEMBL397012

C=CC(=O)OC[SiH2]C(O[Si](C)(C)C)O[Si](C)(C)C

nearest known ligand 0.43

Predicted protein targets (top 10)

geneUniProtsupporting neighboursconfidence
TSHR P16473 7/20 0.43
HPGD P15428 1/20 0.42
ALDH1A1 P00352 4/20 0.41
TP53 P04637 3/20 0.41
HIF1A Q16665 3/20 0.41
CYP3A4 P08684 2/20 0.41
HSD17B10 Q99714 1/20 0.41
THRB P10828 2/20 0.36
MAPK1 P28482 1/20 0.34
SMN1; SMN2 Q16637 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL397194 0.85 TSHR (0.44) TSHRHPGDALDH1A1TP53HIF1A
SCHEMBL6037080 0.83 TSHR (0.41) TSHRHPGDALDH1A1TP53HIF1A
SCHEMBL394436 0.82 TSHR (0.50) TSHRHPGDALDH1A1TP53HIF1A
SCHEMBL3915993 0.80 TSHR (0.47) TSHRHPGDALDH1A1TP53HIF1A
SCHEMBL30784998 0.77 TSHR (0.53) TSHRHPGDALDH1A1TP53HIF1A
SCHEMBL3914586 0.77 TSHR (0.44) TSHRHPGDALDH1A1TP53HIF1A
SCHEMBL3915278 0.77 TSHR (0.48) TSHRHPGDALDH1A1TP53HIF1A
SCHEMBL29939024 0.76 TSHR (0.51) TSHRHPGDALDH1A1TP53HIF1A
SCHEMBL15864750 0.75 TSHR (0.49) TSHRHPGDALDH1A1TP53HIF1A
SCHEMBL4883024 0.74 TSHR (0.42) TSHRHPGDALDH1A1TP53HIF1A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 26 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7816464-B2 Polymer particle dispersion, cosmetic composition comprising it and cosmetic process using it L'OREAL, S.A. (FR) 2010-10-19 US claimed
US-7282550-B2 Composition to provide a layer with uniform etch characteristics MOLECULAR IMPRINTS, INC. (US) 2007-10-16 US claimed
US-20060035029-A1 Method to provide a layer with uniform etch characteristics MOLECULAR IMPRINTS, INC. (US) 2006-02-16 US claimed
US-20060036051-A1 Composition to provide a layer with uniform etch characteristics MOLECULAR IMPRINTS, INC. (US) 2006-02-16 US claimed
US-11029597-B2 Method for producing pattern laminate, method for producing reversal pattern, and pattern laminate FUJIFILM CORPORATION (JP) 2021-06-08 US disclosed
US-20180364566-A1 METHOD FOR PRODUCING PATTERN LAMINATE, METHOD FOR PRODUCING REVERSAL PATTERN, AND PATTERN LAMINATE FUJIFILM CORPORATION (JP) 2018-12-20 US disclosed
US-8110697-B2 Method for the production of polymerizable silicones WACKER CHEMIE AG (DE) 2012-02-07 US disclosed
US-8101789-B2 Method for the production of polymerizable silicones WACKER CHEMIE AG (DE) 2012-01-24 US disclosed
US-7939131-B2 Method to provide a layer with uniform etch characteristics MOLECULAR IMPRINTS, INC. (US) 2011-05-10 US disclosed
EP-2125833-B1 METHOD FOR THE PRODUCTION OF POLYMERISABLE SILICONES WACKER CHEMIE AG (DE) 2010-08-25 EP disclosed
EP-2125834-B1 METHOD FOR THE PRODUCTION OF POLYMERISABLE SILICONES WACKER CHEMIE AG (DE) 2010-08-25 EP disclosed
US-20100041909-A1 METHOD FOR THE PRODUCTION OF POLYMERIZABLE SILICONES WACKER CHEMIE AG (DE) 2010-02-18 US disclosed
US-7241395-B2 Reverse tone patterning on surfaces having planarity perturbations MOLECULAR IMPRINTS, INC. (US) 2007-07-10 US disclosed
US-7205244-B2 Patterning substrates employing multi-film layers defining etch-differential interfaces MOLECULAR IMPRINTS (US) 2007-04-17 US disclosed
US-7041604-B2 Method of patterning surfaces while providing greater control of recess anisotropy MOLECULAR IMPRINTS, INC. (US) 2006-05-09 US disclosed
US-20060063387-A1 Method of Patterning Surfaces While Providing Greater Control of Recess Anisotropy MOLECULAR IMPRINTS, INC. (US) 2006-03-23 US disclosed
US-20060060557-A1 Reverse tone patterning on surfaces having surface planarity perturbations CITIBANK, N.A. 2006-03-23 US disclosed
US-20060063112-A1 Pattern reversal employing thick residual layers MOLECULAR IMPRINTS, INC. (US) 2006-03-23 US disclosed
US-20060063359-A1 Patterning substrates employing multi-film layers defining etch differential interfaces MOLECULAR IMPRINTS, INC. (US) 2006-03-23 US disclosed
US-20060063277-A1 Method of forming an in-situ recessed structure MOLECULAR IMPRINTS, INC. (US) 2006-03-23 US disclosed