⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Zinc Ion SCHEMBL995062 | 0.87 | — | — | |
| Zinc Ion SCHEMBL2374663 | 0.87 | — | — | |
| Zinc Ion SCHEMBL50424 | 0.87 | — | — | |
| Zinc Ion SCHEMBL17159949 | 0.75 | — | — | |
| Zinc Ion SCHEMBL16243215 | 0.75 | — | — | |
| Zinc Ion SCHEMBL8515032 | 0.75 | — | — | |
| Zinc Ion SCHEMBL9599961 | 0.75 | — | — | |
| Zinc Ion SCHEMBL22265904 | 0.75 | — | — | |
| Zinc Ion SCHEMBL17159991 | 0.75 | — | — | |
| Zinc Ion SCHEMBL6046919 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-1291930-B1 | ZnOSSe compound semiconductor, integrated circuit using the semiconductor and method of manufacturing the semiconductor and the integrated circuit | NAT INST OF ADVANCED IND SCIEN (JP) | 2009-05-06 | — | — | EP | disclosed |
| US-6770913-B2 | ZnOSSe compound semiconductor, integrated circuit using the semiconductor and method of manufacturing the semiconductor and the integrated circuit | NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (JP) | 2004-08-03 | — | — | US | disclosed |
| EP-1291930-A2 | ZnOSSe compound semiconductor, integrated circuit using the semiconductor and method of manufacturing the semiconductor and the integrated circuit | National Institue of Advanced Industrial Science and Technology (JP) | 2003-03-12 | — | — | EP | disclosed |
| US-20030042851-A1 | ZnOSSe compound semiconductor, integrated circuit using the semiconductor and method of manufacturing the semiconductor and the integrated circuit | NATIONAL INST. OF ADVANCED IND. SCIENCE AND TECH. (JP) | 2003-03-06 | — | — | US | disclosed |