Known targets — ChEMBL curated mechanism
The experimentally established mechanism targets of Zinc Ion. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Zinc Ion SCHEMBL19511743 | 0.87 | — | — | |
| Zinc Ion SCHEMBL2310477 | 0.87 | — | — | |
| Zinc Ion SCHEMBL50424 | 0.87 | — | — | |
| SCHEMBL471807 | 0.75 | — | — | |
| Zinc Ion SCHEMBL16243215 | 0.75 | — | — | |
| Zinc Ion SCHEMBL5391444 | 0.75 | — | — | |
| Zinc Ion SCHEMBL9599961 | 0.75 | — | — | |
| Zinc Ion SCHEMBL285089 | 0.75 | — | — | |
| Zinc Ion SCHEMBL3975013 | 0.75 | — | — | |
| Zinc Ion SCHEMBL16053834 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20190252571-A1 | METHOD OF EPITAXIAL GROWTH OF A MATERIAL INTERFACE BETWEEN GROUP III-V MATERIALS AND SILICON WAFERS PROVIDING COUNTERBALANCING OF RESIDUAL STRAINS | INTEGRATED SOLAR (NO) | 2019-08-15 | — | — | US | claimed |
| US-20170352536-A1 | A METHOD OF EPITAXIAL GROWTH OF A MATERIAL INTERFACE BETWEEN GROUP III-V MATERIALS AND SILICON WAFERS PROVIDING COUNTERBALANCING OF RESIDUAL STRAINS | INTEGRATED SOLAR (NO) | 2017-12-07 | — | — | US | claimed |
| EP-3238229-A1 | A METHOD OF EPITAXIAL GROWTH OF A MATERIAL INTERFACE BETWEEN GROUP III-V MATERIALS AND SILICON WAFERS PROVIDING COUNTERBALANCING OF RESIDUAL STRAINS | Integrated Solar (NO) | 2017-11-01 | — | — | EP | claimed |
| US-20190252571-A1 | METHOD OF EPITAXIAL GROWTH OF A MATERIAL INTERFACE BETWEEN GROUP III-V MATERIALS AND SILICON WAFERS PROVIDING COUNTERBALANCING OF RESIDUAL STRAINS | INTEGRATED SOLAR (NO) | 2019-08-15 | — | — | US | disclosed |
| US-20170352536-A1 | A METHOD OF EPITAXIAL GROWTH OF A MATERIAL INTERFACE BETWEEN GROUP III-V MATERIALS AND SILICON WAFERS PROVIDING COUNTERBALANCING OF RESIDUAL STRAINS | INTEGRATED SOLAR (NO) | 2017-12-07 | — | — | US | disclosed |
| EP-3238229-A1 | A METHOD OF EPITAXIAL GROWTH OF A MATERIAL INTERFACE BETWEEN GROUP III-V MATERIALS AND SILICON WAFERS PROVIDING COUNTERBALANCING OF RESIDUAL STRAINS | Integrated Solar (NO) | 2017-11-01 | — | — | EP | disclosed |
| US-7030407-B2 | Photon emitter and data transmission device | INFINEON TECHNOLOGIES AG (DE) | 2006-04-18 | — | — | US | disclosed |
| US-20040149982-A1 | Photon emitter and data transmission device | INFINEON TECHNOLOGIES AG (DE) | 2004-08-05 | — | — | US | disclosed |
| US-6645302-B2 | Vapor phase deposition system | SHOWA DENKO KABUSHIKI KAISHA (JP) | 2003-11-11 | — | — | US | disclosed |
| US-20010035530-A1 | Vapor phase deposition system | SHOWA DENKO KABUSHIKI KAISHA (JP) | 2001-11-01 | — | — | US | disclosed |
| US-5396862-A | Method of manufacturing a compound semiconductor | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 1995-03-14 | — | — | US | disclosed |