SCHEMBL399043

SCHEMBL399043

CC(=O)CC(=O)C(=O)O.[Cd]

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
EGLN1 Q9GZT9 2/20 0.42
KDM4E B2RXH2 1/20 0.42
KDM6B O15054 1/20 0.42
KDM5C P41229 1/20 0.42
PHF8 Q9UPP1 1/20 0.42
KDM2A Q9Y2K7 1/20 0.42
MGAM O43451 1/20 0.41
GAA P10253 1/20 0.41
SI P14410 1/20 0.41
MGAM2 Q2M2H8 1/20 0.41
OR51E2 Q9H255 2/20 0.40
HAO1 Q9UJM8 1/20 0.39
HTT P42858 1/20 0.38
FEN1 P39748 4/20 0.37
ERCC5 P28715 3/20 0.37
PTPN1 P18031 1/20 0.37
ALDH1A1 P00352 2/20 0.37
TDP1 Q9NUW8 1/20 0.37
LMNA P02545 1/20 0.36
SLC15A2 Q16348 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL19423 0.97
SCHEMBL333402 0.94 EGLN1 (0.42) EGLN1KDM4EKDM6BKDM5CPHF8
SCHEMBL597441 0.94 EGLN1 (0.42) EGLN1KDM4EKDM6BKDM5CPHF8
SCHEMBL4474843 0.94 EGLN1 (0.42) EGLN1KDM4EKDM6BKDM5CPHF8
SCHEMBL596299 0.94 EGLN1 (0.42) EGLN1KDM4EKDM6BKDM5CPHF8
SCHEMBL6849888 0.94 EGLN1 (0.42) EGLN1KDM4EKDM6BKDM5CPHF8
SCHEMBL2920160 0.94 EGLN1 (0.42) EGLN1KDM4EKDM6BKDM5CPHF8
SCHEMBL2927264 0.94 EGLN1 (0.42) EGLN1KDM4EKDM6BKDM5CPHF8
SCHEMBL108609 0.94 EGLN1 (0.42) EGLN1KDM4EKDM6BKDM5CPHF8
SCHEMBL2124398 0.94 EGLN1 (0.42) EGLN1KDM4EKDM6BKDM5CPHF8

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 57 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7858151-B2 Elements of groups IB, IIIA, VIB formed by placing a substrate in a treatment chamber, performing atomic layer deposition of a group IB element and/or group IIIA elements from separate sources onto a substrate to form a film, group VIA element is then incorporated into the film; solar cell; lamination NANOSOLAR, INC. (US) 2010-12-28 US claimed
WO-2005081789-A2 Formation of CIGS Absorber Layer by Atomic Layer Deposition NANOSOLAR, INC. (US) 2005-09-09 WO claimed
US-20050186342-A1 Elements of groups IB, IIIA, VIB formed by placing a substrate in a treatment chamber, performing atomic layer deposition of a group IB element and/or group IIIA elements from separate sources onto a substrate to form a film, group VIA element is then incorporated into the film; solar cell; lamination NANOSOLAR, INC. (US) 2005-08-25 US claimed
US-10322948-B2 Methods of making metal-oxides and uses thereof for water treatment and energy applications THE REGENTS OF THE UNIVERSITY OF CALIFORNIA (US) 2019-06-18 US disclosed
US-10053622-B2 Light emitting material MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) 2018-08-21 US disclosed
EP-2483204-B1 METHODS OF MAKING METAL-OXIDES AND USES THEREOF FOR WATER TREATMENT AND ENERGY APPLICATIONS UNIV CALIFORNIA (US) 2018-01-17 EP disclosed
US-20170327389-A1 METHODS OF MAKING METAL-OXIDES AND USES THEREOF FOR WATER TREATMENT AND ENERGY APPLICATIONS THE REGENTS OF THE UNIVERSITY OF CALIFORNIA 2017-11-16 US disclosed
US-9670069-B2 Methods of making metal-oxides and uses thereof for water treatment and energy applications THE REGENTS OF THE UNIVERSITY OF CALIFORNIA (US) 2017-06-06 US disclosed
EP-2399733-B1 Preparation of nanocrystallines MASSACHUSETTS INST TECHNOLOGY (US) 2017-05-24 EP disclosed
US-9640686-B2 Electro-optical device MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) 2017-05-02 US disclosed
US-9593027-B2 Porous metal oxide and metal oxide-organic nanocomposites, methods of making and uses thereof THE REGENTS OF THE UNIVERSITY OF CALIFORNIA (US) 2017-03-14 US disclosed
WO-2005081789-A2 Formation of CIGS Absorber Layer by Atomic Layer Deposition NANOSOLAR, INC. (US) 2005-09-09 WO disclosed
US-20050186342-A1 Elements of groups IB, IIIA, VIB formed by placing a substrate in a treatment chamber, performing atomic layer deposition of a group IB element and/or group IIIA elements from separate sources onto a substrate to form a film, group VIA element is then incorporated into the film; solar cell; lamination NANOSOLAR, INC. (US) 2005-08-25 US disclosed
US-20050084443-A1 Preparation of nanocrystallites MASSACHUSETTS INSTITUTE OF TECHNOLGY 2005-04-21 US disclosed
US-6821337-B2 Preparation of nanocrystallites MASSACHUSETTS INSTITUTE OF TECHNOLOGY 2004-11-23 US disclosed
EP-1377438-A2 PREPARATION OF NANOCRYSTALLITES Massachussets Institute of Technology (US) 2004-01-07 EP disclosed
US-20030209105-A1 Preparation of nanocrystallites MASSACHUSETTS INSTITUTE OF TECHNOLOGY, A MASSACHUSETTS CORPORATION 2003-11-13 US disclosed
US-6576291-B2 Preparation of nanocrystallites MASSACHUSETTS INSTITUTE OF TECHNOLOGY 2003-06-10 US disclosed
US-20020071952-A1 Contacting metal or metal containing salt and reducing agent to form precursor which is contacted with oxide, sulfide, or other metal forming mixture which is heated in presence of amine; semiconductors NANOSYS, INC. 2002-06-13 US disclosed
WO-2002047117-A2 PREPARATION OF NANOCRYSTALLITES MASSACHUSSETS INSTITUTE OF TECHNOLOGY (US) 2002-06-13 WO disclosed