⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL5419767 | 0.90 | — | — | |
| SCHEMBL12898467 | 0.84 | — | — | |
| SCHEMBL274371 | 0.83 | — | — | |
| SCHEMBL5405095 | 0.83 | — | — | |
| SCHEMBL8022261 | 0.83 | — | — | |
| SCHEMBL592542 | 0.81 | — | — | |
| SCHEMBL3674575 | 0.81 | TSHR (0.33) | — | |
| SCHEMBL7742071 | 0.81 | — | — | |
| SCHEMBL250819 | 0.81 | TSHR (0.39) | — | |
| SCHEMBL448076 | 0.81 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8101236-B2 | Method of fabricating a SiCOH dielectric material with improved toughness and improved Si-C bonding | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2012-01-24 | — | — | US | claimed |
| US-20090181178-A1 | SiCOH DIELECTRIC MATERIAL WITH IMPROVED TOUGHNESS AND IMPROVED Si-C BONDING, SEMICONDUCTOR DEVICE CONTAINING THE SAME, AND METHOD TO MAKE THE SAME | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2009-07-16 | — | — | US | claimed |
| US-20080265381-A1 | SiCOH DIELECTRIC | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2008-10-30 | — | — | US | claimed |
| US-7381659-B2 | Method for reducing film stress for SiCOH low-k dielectric materials | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2008-06-03 | — | — | US | claimed |
| US-20070173071-A1 | SiCOH dielectric | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2007-07-26 | — | — | US | claimed |
| US-20070117408-A1 | METHOD FOR REDUCING FILM STRESS FOR SICOH LOW-K DIELECTRIC MATERIALS | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2007-05-24 | — | — | US | claimed |
| US-20060165891-A1 | SiCOH dielectric material with improved toughness and improved Si-C bonding, semiconductor device containing the same, and method to make the same | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2006-07-27 | — | — | US | claimed |
| US-20050194619-A1 | SiCOH dielectric material with improved toughness and improved Si-C bonding, semiconductor device containing the same, and method to make the same | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2005-09-08 | — | — | US | claimed |
| US-8101236-B2 | Method of fabricating a SiCOH dielectric material with improved toughness and improved Si-C bonding | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2012-01-24 | — | — | US | disclosed |
| US-20110101489-A1 | SiCOH DIELECTRIC MATERIAL WITH IMPROVED TOUGHNESS AND IMPROVED Si-C BONDING, SEMICONDUCTOR DEVICE CONTAINING THE SAME, AND METHOD TO MAKE THE SAME | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2011-05-05 | — | — | US | disclosed |
| US-20110042789-A1 | MATERIAL FOR CHEMICAL VAPOR DEPOSITION, SILICON-CONTAINING INSULATING FILM AND METHOD FOR PRODUCTION OF THE SILICON-CONTAINING INSULATING FILM | JSR CORPORATION (JP) | 2011-02-24 | — | — | US | disclosed |
| US-7892648-B2 | SiCOH dielectric material with improved toughness and improved Si-C bonding | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2011-02-22 | — | — | US | disclosed |
| US-20090181178-A1 | SiCOH DIELECTRIC MATERIAL WITH IMPROVED TOUGHNESS AND IMPROVED Si-C BONDING, SEMICONDUCTOR DEVICE CONTAINING THE SAME, AND METHOD TO MAKE THE SAME | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2009-07-16 | — | — | US | disclosed |
| US-7479306-B2 | SiCOH dielectric material with improved toughness and improved Si-C bonding, semiconductor device containing the same, and method to make the same | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2009-01-20 | — | — | US | disclosed |
| US-20080265381-A1 | SiCOH DIELECTRIC | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2008-10-30 | — | — | US | disclosed |
| US-7381659-B2 | Method for reducing film stress for SiCOH low-k dielectric materials | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2008-06-03 | — | — | US | disclosed |
| US-20070173071-A1 | SiCOH dielectric | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2007-07-26 | — | — | US | disclosed |
| US-20070117408-A1 | METHOD FOR REDUCING FILM STRESS FOR SICOH LOW-K DIELECTRIC MATERIALS | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2007-05-24 | — | — | US | disclosed |
| US-20060165891-A1 | SiCOH dielectric material with improved toughness and improved Si-C bonding, semiconductor device containing the same, and method to make the same | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2006-07-27 | — | — | US | disclosed |
| US-20050194619-A1 | SiCOH dielectric material with improved toughness and improved Si-C bonding, semiconductor device containing the same, and method to make the same | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2005-09-08 | — | — | US | disclosed |