Acetic Acid

Acetic Acid

SCHEMBL4008024

CC(=O)O.CCCOCCOCCC.CO

nearest known ligand 0.42

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Known targets — ChEMBL curated mechanism

ADRA2AADRA2BADRA2CADRB2AGTR1AVPR1AAVPR1BAVPR2BDKRB2CALCRCHRNA3CHRNB4ESR1ESR2GHSRGNRHRGSC1HSPA8MALT1MC1RMC4RNOS1NOS2NOS3OPRK1OXTRRAMP1RAMP2RAMP3SCN5ASSTR1SSTR2SSTR3SSTR4SSTR5dacAdacBdacCfolPftsImrcAmrcBmrdArplArplBrplCrplDrplErplFrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmFrpmGrpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUykgMykgO

The experimentally established mechanism targets of Acetic Acid. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 4/20 0.42
TSHR P16473 3/20 0.42
FFAR3 O14843 3/20 0.39
LCK P06239 1/20 0.39
FYN P06241 1/20 0.39
HSD17B10 Q99714 3/20 0.39
CES2 O00748 1/20 0.38
HCAR2 Q8TDS4 1/20 0.38
THRB P10828 2/20 0.37
BLM P54132 1/20 0.36
PMP22 Q01453 1/20 0.36
MEN1 O00255 1/20 0.36
HTT P42858 1/20 0.36
KMT2A Q03164 1/20 0.36
MAPT P10636 1/20 0.36
LMNA P02545 2/20 0.35
HDAC3 O15379 1/20 0.35
HDAC1 Q13547 1/20 0.35
HDAC2 Q92769 1/20 0.35
HDAC8 Q9BY41 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Acetic Acid SCHEMBL7769091 0.97 ALDH1A1 (0.44) ALDH1A1TSHRFFAR3LCKFYN
Acetic Acid SCHEMBL262664 0.94 FFAR3 (0.44) ALDH1A1TSHRFFAR3LCKFYN
Acetic Acid SCHEMBL768587 0.90 ALDH1A1 (0.56) ALDH1A1TSHRFFAR3LCKFYN
Acetic Acid SCHEMBL28248415 0.89 FFAR3 (0.39) ALDH1A1TSHRFFAR3LCKFYN
Acetic Acid SCHEMBL28096518 0.87 MEN1 (0.52) ALDH1A1TSHRFFAR3LCKFYN
Triethylene Glycol SCHEMBL273639 0.87 MEN1 (0.52) ALDH1A1TSHRFFAR3LCKFYN
Acetic Acid SCHEMBL4208068 0.87 TSHR (0.52) ALDH1A1TSHRCES2HCAR2THRB
Acetic Acid SCHEMBL356157 0.87 ALDH1A1 (0.38) ALDH1A1TSHRFFAR3LCKFYN
Acetic Acid SCHEMBL896476 0.86 TSHR (0.44) ALDH1A1TSHRFFAR3LCKFYN
Acetic Acid SCHEMBL26934034 0.84 TSHR (0.54) ALDH1A1TSHRFFAR3LCKFYN

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 23 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-103535120-B Conductive pattern and manufacture method thereof DIC株式会社 2016-09-07 CN disclosed
CN-103201117-B Resin composition for forming receiving layer, and receiving substrate, printed matter, conductive pattern and circuit obtained using same DIC CORP. (JP) 2015-08-19 CN disclosed
CN-104588643-A metal microparticle dispersion, process for production of electrically conductive substrate, and electrically conductive substrate DAINIPPON PRINTING CO LTD 2015-05-06 CN disclosed
CN-102596455-B Metal microparticle dispersion, method for producing conductive substrate, and conductive substrate DAINIPPON PRINTING CO LTD 2015-02-04 CN disclosed
CN-103535120-A Conductive pattern and method for producing same DAINIPPON INK & CHEMICALS 2014-01-22 CN disclosed
CN-103249571-A Resin composition for forming receiving layer, receiving substrate obtained using same, printed matter, conductive pattern, and electrical circuit DAINIPPON INK & CHEMICALS 2013-08-14 CN disclosed
CN-103201117-A Resin composition for forming receiving layer, and receiving substrate, printed matter, conductive pattern and circuit obtained using same DAINIPPON INK & CHEMICALS 2013-07-10 CN disclosed
CN-103170618-A Metal microparticle dispersion, process for production of electrically conductive substrate, and electrically conductive substrate DAINIPPON PRINTING CO LTD 2013-06-26 CN disclosed
CN-102596455-A Metal microparticle dispersion, method for producing conductive substrate, and conductive substrate DAINIPPON PRINTING CO LTD 2012-07-18 CN disclosed
US-RE40728-E1 Acid functional polymers based on benzocyclobutene DOW GLOBAL TECHNOLOGIES INC. 2009-06-09 US disclosed
EP-1593149-A1 FLUORINE-FREE PLASMA CURING PROCESS FOR POROUS LOW-K-MATERIALS Axcelis Technologies, Inc. (US) 2005-11-09 EP disclosed
US-6902771-B2 Process for producing silica-based film, silica-based film, insulating film, and semiconductor device JSR CORPORATION (JP) 2005-06-07 US disclosed
US-20050042464-A1 Process for producing silica-based film, silica-based film, insulating film, and semiconductor device JSR CORPORATION (JP) 2005-02-24 US disclosed
WO-2004066374-A1 FLUORINE-FREE PLASMA CURING PROCESS FOR POROUS LOW-K-MATERIALS AXCELIS TECHNOLOGIES, INC. (US) 2004-08-05 WO disclosed
US-20040028916-A1 Fluorine-free plasma curing process for porous low-k materials AXCELIS TECHNOLOGIES, INC. 2004-02-12 US disclosed
US-20030157340-A1 Process for producing silica-based film, silica-based film, insulating film, and semiconductor device JSR CORPORATION (JP) 2003-08-21 US disclosed
US-20030104225-A1 Process for producing silica-based film, silica-based film, insulating film, and semiconductor device JSR CORPORATION (JP) 2003-06-05 US disclosed
US-6361926-B1 curable polybenzocylobutane with carboxy group on C6 ring; a photoactive composition comprises a dissolution inhibitor; wet etching; aqueous developable, positive photoresist; toughness, adhesion, dielectric constant, low stress; excellent resolution without the need to handle organic developer solvents THE DOW CHEMICAL COMPANY 2002-03-26 US disclosed
US-20010018129-A1 Process for producing silica-based film, silica-based film, insulating film, and semiconductor device JSR CORPORATION (JP) 2001-08-30 US disclosed
EP-1122770-A2 Silica-based insulating film and its manufacture JSR Corporation (JP) 2001-08-08 EP disclosed