⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL8006229 | 0.93 | — | — | |
| SCHEMBL8015375 | 0.91 | — | — | |
| SCHEMBL8019350 | 0.85 | — | — | |
| SCHEMBL12898590 | 0.81 | — | — | |
| SCHEMBL2860352 | 0.80 | — | — | |
| SCHEMBL5420630 | 0.80 | — | — | |
| SCHEMBL5404695 | 0.80 | — | — | |
| SCHEMBL8019449 | 0.80 | LMNA (0.38) | — | |
| SCHEMBL13089604 | 0.78 | — | — | |
| SCHEMBL5415006 | 0.78 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 26 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230114933-A1 | GRAPHENE INTERCONNECT STRUCTURE, ELECTRONIC DEVICE INCLUDING GRAPHENE INTERCONNECT STRUCTURE, AND METHOD OF PREPARING GRAPHENE INTERCONNECT STRUCTURE | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2023-04-13 | — | — | US | claimed |
| US-8101236-B2 | Method of fabricating a SiCOH dielectric material with improved toughness and improved Si-C bonding | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2012-01-24 | — | — | US | claimed |
| US-20090181178-A1 | SiCOH DIELECTRIC MATERIAL WITH IMPROVED TOUGHNESS AND IMPROVED Si-C BONDING, SEMICONDUCTOR DEVICE CONTAINING THE SAME, AND METHOD TO MAKE THE SAME | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2009-07-16 | — | — | US | claimed |
| US-20080265381-A1 | SiCOH DIELECTRIC | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2008-10-30 | — | — | US | claimed |
| US-7381659-B2 | Method for reducing film stress for SiCOH low-k dielectric materials | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2008-06-03 | — | — | US | claimed |
| US-20070173071-A1 | SiCOH dielectric | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2007-07-26 | — | — | US | claimed |
| US-20070117408-A1 | METHOD FOR REDUCING FILM STRESS FOR SICOH LOW-K DIELECTRIC MATERIALS | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2007-05-24 | — | — | US | claimed |
| US-20060165891-A1 | SiCOH dielectric material with improved toughness and improved Si-C bonding, semiconductor device containing the same, and method to make the same | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2006-07-27 | — | — | US | claimed |
| US-20050194619-A1 | SiCOH dielectric material with improved toughness and improved Si-C bonding, semiconductor device containing the same, and method to make the same | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2005-09-08 | — | — | US | claimed |
| US-20230114933-A1 | GRAPHENE INTERCONNECT STRUCTURE, ELECTRONIC DEVICE INCLUDING GRAPHENE INTERCONNECT STRUCTURE, AND METHOD OF PREPARING GRAPHENE INTERCONNECT STRUCTURE | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2023-04-13 | — | — | US | disclosed |
| US-8101236-B2 | Method of fabricating a SiCOH dielectric material with improved toughness and improved Si-C bonding | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2012-01-24 | — | — | US | disclosed |
| US-20110101489-A1 | SiCOH DIELECTRIC MATERIAL WITH IMPROVED TOUGHNESS AND IMPROVED Si-C BONDING, SEMICONDUCTOR DEVICE CONTAINING THE SAME, AND METHOD TO MAKE THE SAME | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2011-05-05 | — | — | US | disclosed |
| US-7892648-B2 | SiCOH dielectric material with improved toughness and improved Si-C bonding | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2011-02-22 | — | — | US | disclosed |
| US-20100261925-A1 | METHOD FOR PRODUCING SILICON COMPOUND | JSR CORPORATION (JP) | 2010-10-14 | — | — | US | disclosed |
| US-20060165891-A1 | SiCOH dielectric material with improved toughness and improved Si-C bonding, semiconductor device containing the same, and method to make the same | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2006-07-27 | — | — | US | disclosed |
| US-20050194619-A1 | SiCOH dielectric material with improved toughness and improved Si-C bonding, semiconductor device containing the same, and method to make the same | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2005-09-08 | — | — | US | disclosed |
| EP-0653472-B1 | Curable organopolysiloxane composition containing adhesion promoter | DOW CORNING TORAY SILICONE (JP) | 2000-01-19 | — | — | EP | disclosed |
| US-5527932-A | REACTION PRODUCT OF AMINE, UNSATURATED EPOXY COMPOUNDS AND SILICON COMPOUND WITH AT LEAST TWO SILICON-BONDED ALKOXY GROUPS | DOW CORNING TORAY SILICONE CO., LTD. (JP) | 1996-06-18 | — | — | US | disclosed |
| US-5445891-A | A reaction product of an amine compound with an aliphatically unsaturated epoxy compound | DOW CORNING TORAY SILICONCO., LTD. (JP) | 1995-08-29 | — | — | US | disclosed |
| EP-0653472-A2 | Curable organopolysiloxane composition containing adhesion promoter | Dow Corning Toray Silicone Company, Limited (JP) | 1995-05-17 | — | — | EP | disclosed |