⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL5417882 | 0.84 | — | — | |
| SCHEMBL13089350 | 0.80 | — | — | |
| SCHEMBL12898467 | 0.73 | — | — | |
| SCHEMBL329798 | 0.70 | — | — | |
| SCHEMBL467815 | 0.67 | — | — | |
| SCHEMBL467684 | 0.67 | — | — | |
| SCHEMBL467781 | 0.67 | — | — | |
| SCHEMBL467723 | 0.67 | — | — | |
| SCHEMBL12006888 | 0.67 | — | — | |
| SCHEMBL467604 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 69 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230114933-A1 | GRAPHENE INTERCONNECT STRUCTURE, ELECTRONIC DEVICE INCLUDING GRAPHENE INTERCONNECT STRUCTURE, AND METHOD OF PREPARING GRAPHENE INTERCONNECT STRUCTURE | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2023-04-13 | — | — | US | claimed |
| CN-110073030-A | Use of silyl-bridged alkyl compounds for dense OSG films | 弗萨姆材料美国有限责任公司 | 2019-07-30 | — | — | CN | claimed |
| US-8951342-B2 | Methods for using porogens for low k porous organosilica glass films | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2015-02-10 | — | — | US | claimed |
| US-20130260575-A1 | SILICON PRECURSORS AND COMPOSITIONS COMPRISING SAME FOR DEPOSITING LOW DIELECTRIC CONSTANT FILMS | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2013-10-03 | — | — | US | claimed |
| US-20130095255-A1 | Porogens, Porogenated Precursors and Methods for Using the Same to Provide Porous Organosilica Glass Films with Low Dielectric Constants | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2013-04-18 | — | — | US | claimed |
| US-20120282415-A1 | Methods For Using Porogens For Low K Porous Organosilica Glass Films | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2012-11-08 | — | — | US | claimed |
| US-8101236-B2 | Method of fabricating a SiCOH dielectric material with improved toughness and improved Si-C bonding | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2012-01-24 | — | — | US | claimed |
| EP-1354980-B1 | Method for forming a porous SiOCH layer. | AIR PROD & CHEM (US) | 2011-02-23 | — | — | EP | claimed |
| EP-2116632-A2 | Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants | Air Products and Chemicals, Inc. (US) | 2009-11-11 | — | — | EP | claimed |
| US-20090181178-A1 | SiCOH DIELECTRIC MATERIAL WITH IMPROVED TOUGHNESS AND IMPROVED Si-C BONDING, SEMICONDUCTOR DEVICE CONTAINING THE SAME, AND METHOD TO MAKE THE SAME | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2009-07-16 | — | — | US | claimed |
| US-20080268177-A1 | Porogens, Porogenated Precursors and Methods for Using the Same to Provide Porous Organosilica Glass Films with Low Dielectric Constants | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2008-10-30 | — | — | US | claimed |
| US-20080265381-A1 | SiCOH DIELECTRIC | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2008-10-30 | — | — | US | claimed |
| US-7381659-B2 | Method for reducing film stress for SiCOH low-k dielectric materials | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2008-06-03 | — | — | US | claimed |
| US-20070173071-A1 | SiCOH dielectric | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2007-07-26 | — | — | US | claimed |
| US-20070117408-A1 | METHOD FOR REDUCING FILM STRESS FOR SICOH LOW-K DIELECTRIC MATERIALS | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2007-05-24 | — | — | US | claimed |
| US-20060165891-A1 | SiCOH dielectric material with improved toughness and improved Si-C bonding, semiconductor device containing the same, and method to make the same | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2006-07-27 | — | — | US | claimed |
| US-20050194619-A1 | SiCOH dielectric material with improved toughness and improved Si-C bonding, semiconductor device containing the same, and method to make the same | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2005-09-08 | — | — | US | claimed |
| US-20030232137-A1 | Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants | VERSUM MATERIALS US, LLC | 2003-12-18 | — | — | US | claimed |
| EP-1354980-A1 | Method for forming a porous SiOCH layer. | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2003-10-22 | — | — | EP | claimed |
| US-20230114933-A1 | GRAPHENE INTERCONNECT STRUCTURE, ELECTRONIC DEVICE INCLUDING GRAPHENE INTERCONNECT STRUCTURE, AND METHOD OF PREPARING GRAPHENE INTERCONNECT STRUCTURE | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2023-04-13 | — | — | US | disclosed |
| CN-110073030-A | Use of silyl-bridged alkyl compounds for dense OSG films | 弗萨姆材料美国有限责任公司 | 2019-07-30 | — | — | CN | disclosed |
| US-9850574-B2 | Forming a low-k dielectric layer with reduced dielectric constant and strengthened mechanical properties | APPLIED MATERIALS, INC. (US) | 2017-12-26 | — | — | US | disclosed |
| US-9324571-B2 | Post treatment for dielectric constant reduction with pore generation on low K dielectric films | APPLIED MATERIALS, INC. (US) | 2016-04-26 | — | — | US | disclosed |
| US-20150380265-A1 | POST TREATMENT FOR DIELECTRIC CONSTANT REDUCTION WITH PORE GENERATION ON LOW K DIELECTRIC FILMS | APPLIED MATERIALS, INC. (US) | 2015-12-31 | — | — | US | disclosed |
| US-20150368803-A1 | UV CURING PROCESS TO IMPROVE MECHANICAL STRENGTH AND THROUGHPUT ON LOW-K DIELECTRIC FILMS | APPLIED MATERIALS, INC. | 2015-12-24 | — | — | US | disclosed |
| US-20150232992-A1 | LOW-K DIELECTRIC LAYER WITH REDUCED DIELECTRIC CONSTANT AND STRENGTHENED MECHANICAL PROPERTIES | APPLIED MATERIALS, INC. | 2015-08-20 | — | — | US | disclosed |
| US-9061317-B2 | Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2015-06-23 | — | — | US | disclosed |
| US-8951342-B2 | Methods for using porogens for low k porous organosilica glass films | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2015-02-10 | — | — | US | disclosed |
| WO-2014158408-A1 | UV CURING PROCESS TO IMPROVE MECHANICAL STRENGTH AND THROUGHPUT ON LOW-K DIELECTRIC FILMS | APPLIED MATERIALS, INC. (US) | 2014-10-02 | — | — | WO | disclosed |
| US-20130260575-A1 | SILICON PRECURSORS AND COMPOSITIONS COMPRISING SAME FOR DEPOSITING LOW DIELECTRIC CONSTANT FILMS | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2013-10-03 | — | — | US | disclosed |
| US-20130095255-A1 | Porogens, Porogenated Precursors and Methods for Using the Same to Provide Porous Organosilica Glass Films with Low Dielectric Constants | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2013-04-18 | — | — | US | disclosed |
| US-20120282415-A1 | Methods For Using Porogens For Low K Porous Organosilica Glass Films | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2012-11-08 | — | — | US | disclosed |
| US-8293001-B2 | Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2012-10-23 | — | — | US | disclosed |
| US-8101236-B2 | Method of fabricating a SiCOH dielectric material with improved toughness and improved Si-C bonding | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2012-01-24 | — | — | US | disclosed |
| US-8053173-B2 | Multi-functional linear siloxane compound, a siloxane polymer prepared from the compound, and a process for forming a dielectric film by using the polymer | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2011-11-08 | — | — | US | disclosed |
| US-20110143032-A1 | Porogens, Porogenated Precursors and Methods for Using the Same to Provide Porous Organosilica Glass Films With Low Dielectric Constants | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2011-06-16 | — | — | US | disclosed |
| US-7943195-B2 | Mixing of glass with hydrocarbons; chemical vapor deposition; mixing organosilane and/or organosiloxane precursors with porogens; neohexyl-1,3,5,7-tetramethylcyclo-tetrasiloxane | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2011-05-17 | — | — | US | disclosed |
| US-20110101489-A1 | SiCOH DIELECTRIC MATERIAL WITH IMPROVED TOUGHNESS AND IMPROVED Si-C BONDING, SEMICONDUCTOR DEVICE CONTAINING THE SAME, AND METHOD TO MAKE THE SAME | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2011-05-05 | — | — | US | disclosed |
| US-20110042789-A1 | MATERIAL FOR CHEMICAL VAPOR DEPOSITION, SILICON-CONTAINING INSULATING FILM AND METHOD FOR PRODUCTION OF THE SILICON-CONTAINING INSULATING FILM | JSR CORPORATION (JP) | 2011-02-24 | — | — | US | disclosed |
| US-20110042789-A1 | MATERIAL FOR CHEMICAL VAPOR DEPOSITION, SILICON-CONTAINING INSULATING FILM AND METHOD FOR PRODUCTION OF THE SILICON-CONTAINING INSULATING FILM | JSR CORPORATION (JP) | 2011-02-24 | — | — | US | disclosed |
| EP-1354980-B1 | Method for forming a porous SiOCH layer. | AIR PROD & CHEM (US) | 2011-02-23 | — | — | EP | disclosed |
| US-7892648-B2 | SiCOH dielectric material with improved toughness and improved Si-C bonding | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2011-02-22 | — | — | US | disclosed |
| EP-2264219-A1 | MATERIAL FOR CHEMICAL VAPOR DEPOSITION, SILICON-CONTAINING INSULATING FILM AND PROCESS FOR PRODUCTION THEREOF | JSR Corporation (JP) | 2010-12-22 | — | — | EP | disclosed |
| US-20100261925-A1 | METHOD FOR PRODUCING SILICON COMPOUND | JSR CORPORATION (JP) | 2010-10-14 | — | — | US | disclosed |
| US-20090321894-A1 | Multi-functional linear siloxane compound, a siloxane polymer prepared from the compound, and a process for forming a dielectric film by using the polymer | LEE JAE JUN | 2009-12-31 | — | — | US | disclosed |
| EP-2116632-A2 | Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants | Air Products and Chemicals, Inc. (US) | 2009-11-11 | — | — | EP | disclosed |
| US-7582718-B2 | Multi-functional linear siloxane compound, a siloxane polymer prepared from the compound, and a process for forming a dielectric film by using the polymer | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2009-09-01 | — | — | US | disclosed |
| US-20090181178-A1 | SiCOH DIELECTRIC MATERIAL WITH IMPROVED TOUGHNESS AND IMPROVED Si-C BONDING, SEMICONDUCTOR DEVICE CONTAINING THE SAME, AND METHOD TO MAKE THE SAME | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2009-07-16 | — | — | US | disclosed |
| US-7479306-B2 | SiCOH dielectric material with improved toughness and improved Si-C bonding, semiconductor device containing the same, and method to make the same | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2009-01-20 | — | — | US | disclosed |
| US-20080271640-A1 | Porogens, Porogenated Precursors and Methods for Using the Same to Provide Porous Organosilica Glass Films with Low Dielectric Constants | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2008-11-06 | — | — | US | disclosed |
| US-20080268177-A1 | Porogens, Porogenated Precursors and Methods for Using the Same to Provide Porous Organosilica Glass Films with Low Dielectric Constants | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2008-10-30 | — | — | US | disclosed |
| US-20080265381-A1 | SiCOH DIELECTRIC | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2008-10-30 | — | — | US | disclosed |
| US-7384471-B2 | Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2008-06-10 | — | — | US | disclosed |
| US-7381659-B2 | Method for reducing film stress for SiCOH low-k dielectric materials | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2008-06-03 | — | — | US | disclosed |
| US-7357961-B2 | Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2008-04-15 | — | — | US | disclosed |
| US-20070173071-A1 | SiCOH dielectric | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2007-07-26 | — | — | US | disclosed |
| EP-1795627-A1 | CVD method for forming a porous low dielectric constant SiOCH film | Air Products and Chemicals, Inc. (US) | 2007-06-13 | — | — | EP | disclosed |
| US-20070117408-A1 | METHOD FOR REDUCING FILM STRESS FOR SICOH LOW-K DIELECTRIC MATERIALS | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2007-05-24 | — | — | US | disclosed |
| US-20060165891-A1 | SiCOH dielectric material with improved toughness and improved Si-C bonding, semiconductor device containing the same, and method to make the same | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2006-07-27 | — | — | US | disclosed |
| US-20050194619-A1 | SiCOH dielectric material with improved toughness and improved Si-C bonding, semiconductor device containing the same, and method to make the same | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2005-09-08 | — | — | US | disclosed |
| US-6930393-B2 | hydrolyzable silicon compound or at least one product resulting from at least partial hydrolysis condensation of the silicon compound | SHIN-ETSU CHEMICAL CO. LTD. (JP) | 2005-08-16 | — | — | US | disclosed |
| US-20040201014-A1 | Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. | 2004-10-14 | — | — | US | disclosed |
| US-20040202874-A1 | Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. | 2004-10-14 | — | — | US | disclosed |
| CN-1536023-A | Porous membrane shaping composition, preparation method of porous membrane, porous membrane intercalation insulating film and semiconductor device | ��Խ��ѧ��ҵ��ʽ���� | 2004-10-13 | — | — | CN | disclosed |
| US-20040197474-A1 | Method for enhancing deposition rate of chemical vapor deposition films | VERSUM MATERIALS US, LLC | 2004-10-07 | — | — | US | disclosed |
| US-20040195660-A1 | Composition for forming porous film, porous film and method for forming the same, interlayer insulator film, and semiconductor device | SHIN-ETSU CHEMICAL CO., LTD. | 2004-10-07 | — | — | US | disclosed |
| EP-1464726-A2 | CVD method for forming a porous low dielectric constant SiOCH film | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2004-10-06 | — | — | EP | disclosed |
| US-20030232137-A1 | Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants | VERSUM MATERIALS US, LLC | 2003-12-18 | — | — | US | disclosed |
| EP-1354980-A1 | Method for forming a porous SiOCH layer. | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2003-10-22 | — | — | EP | disclosed |
| EP-1354980-A1 | Method for forming a porous SiOCH layer. | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2003-10-22 | — | — | EP | disclosed |