SCHEMBL4025320

SCHEMBL4025320

CN(C)NC(C)([SiH3])NN(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4022789 0.73
SCHEMBL2254980 0.69
SCHEMBL4028209 0.60
SCHEMBL27747854 0.59
SCHEMBL2100119 0.56
SCHEMBL2100376 0.56
SCHEMBL2102685 0.56
SCHEMBL3797509 0.56
SCHEMBL51749 0.55
SCHEMBL1904241 0.55

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20070004931-A1 Precursors for depositing silicon containing films VERSUM MATERIALS US, LLC 2007-01-04 US claimed
WO-2005121399-A1 PRECURSORS FOR DEPOSITION OF SILICON NITRIDE, SILICON OXYNITRIDE AND METAL SILICON OXYNITRIDES EPICHEM LIMITED (GB) 2005-12-22 WO claimed
US-7488690-B2 Silicon nitride film with stress control APPLIED MATERIALS, INC. (US) 2009-02-10 US disclosed
US-7288145-B2 Precursors for depositing silicon containing films AIR PRODUCTS AND CHEMICALS, INC. (US) 2007-10-30 US disclosed
US-20070004931-A1 Precursors for depositing silicon containing films VERSUM MATERIALS US, LLC 2007-01-04 US disclosed
US-7122222-B2 Precursors for depositing silicon containing films and processes thereof AIR PRODUCTS AND CHEMICALS, INC. (US) 2006-10-17 US disclosed
WO-2006014471-A1 SILICON NITRIDE FILM WITH STRESS CONTROL APPLIED MATERIALS, INC. (US) 2006-02-09 WO disclosed
US-20060009041-A1 Silicon nitride film with stress control APPLIED MATERIALS, INC. 2006-01-12 US disclosed
WO-2005121399-A1 PRECURSORS FOR DEPOSITION OF SILICON NITRIDE, SILICON OXYNITRIDE AND METAL SILICON OXYNITRIDES EPICHEM LIMITED (GB) 2005-12-22 WO disclosed
US-20040146644-A1 Precursors for depositing silicon containing films and processes thereof VERSUM MATERIALS US, LLC 2004-07-29 US disclosed
EP-1441042-A1 Precursors for depositing silicon containing films and processes thereof AIR PRODUCTS AND CHEMICALS, INC. (US) 2004-07-28 EP disclosed