Predicted protein targets (top 1)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ELANE | P08246 | 3/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2416921 | 1.00 | ELANE (0.32) | ELANE | |
| SCHEMBL1725969 | 0.97 | ELANE (0.33) | ELANE | |
| SCHEMBL4622920 | 0.95 | ELANE (0.32) | ELANE | |
| SCHEMBL5451160 | 0.95 | ELANE (0.32) | ELANE | |
| SCHEMBL6895243 | 0.95 | ELANE (0.32) | ELANE | |
| SCHEMBL2388677 | 0.95 | ELANE (0.32) | ELANE | |
| SCHEMBL7127383 | 0.95 | ELANE (0.32) | ELANE | |
| SCHEMBL4213128 | 0.95 | ELANE (0.32) | ELANE | |
| SCHEMBL2387294 | 0.95 | ELANE (0.32) | ELANE | |
| SCHEMBL5151400 | 0.95 | ELANE (0.32) | ELANE |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-7521745-B2 | Semiconductor device reducing leakage across a ferroelectric layer | FUJITSU LIMITED (JP) | 2009-04-21 | — | — | US | disclosed |
| US-6706585-B2 | Chemical vapor deposition process for fabricating layered superlattice materials | SYMETRIX CORPORATION | 2004-03-16 | — | — | US | disclosed |
| US-6562678-B1 | Chemical vapor deposition process for fabricating layered superlattice materials | SYMETRIX CORPORATION | 2003-05-13 | — | — | US | disclosed |
| US-6511718-B1 | Depositing high quality polycrystalline metal oxide ferro-electric superlattice layer at high rate; forming mist of liquid precursor, gasifying without decomposing, adding oxidant and injecting into reactor | SYMETRIX CORPORATION | 2003-01-28 | — | — | US | disclosed |
| EP-0708983-B1 | CHEMICAL VAPOR DEPOSITION PROCESS FOR FABRICATING LAYERED SUPERLATTICE MATERIALS | SYMETRIX CORP (US) | 2001-09-26 | — | — | EP | disclosed |
| EP-0653501-B1 | Plasma-CVD method and apparatus | NISSIN ELECTRIC CO LTD (JP) | 1998-02-04 | — | — | EP | disclosed |
| US-5562952-A | APPLYING RADIO FREQUENCY POWER PREPARED BY EFFECTING FIRST AND SECOND AMPLITUDE MODULATION | NISSIN ELECTRIC CO., LTD. (JP) | 1996-10-08 | — | — | US | disclosed |
| EP-0653501-A1 | Plasma-CVD method and apparatus | NISSIN ELECTRIC COMPANY, LIMITED (JP) | 1995-05-17 | — | — | EP | disclosed |