SCHEMBL5451160

CC(C)(C)C(=O)OC(=O)C(=O)C(C)(C)C.CC(C)(C)C(=O)OC(=O)C(=O)C(C)(C)C.CC(C)(C)C(=O)OC(=O)C(=O)C(C)(C)C.[La]

nearest known ligand 0.32

Predicted protein targets (top 1)

	gene	UniProt	supporting neighbours	confidence
▸	ELANE	P08246	3/20	0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compound	similarity	top predicted	shared targets
SCHEMBL8707537	1.00	ELANE (0.32)	ELANE
SCHEMBL1725969	0.97	ELANE (0.33)	ELANE
SCHEMBL4037037	0.95	ELANE (0.32)	ELANE
SCHEMBL4622920	0.95	ELANE (0.32)	ELANE
SCHEMBL2389025	0.95	ELANE (0.32)	ELANE
SCHEMBL2388677	0.95	ELANE (0.32)	ELANE
SCHEMBL4213128	0.95	ELANE (0.32)	ELANE
SCHEMBL2387294	0.95	ELANE (0.32)	ELANE
SCHEMBL7127383	0.95	ELANE (0.32)	ELANE
SCHEMBL7730649	0.95	ELANE (0.32)	ELANE

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

Patent	Title	Assignee	Published	Priority	Filing	Country	Status
US-20050051828-A1	Methods of forming metal thin films, lanthanum oxide films, and high dielectric films for semiconductor devices using atomic layer deposition	PARK KI-YEON (KR)	2005-03-10	—	—	US	claimed
US-20070259212-A1	METHODS OF FORMING METAL THIN FILMS, LANTHANUM OXIDE FILMS, AND HIGH DIELECTRIC FILMS FOR SEMICONDUCTOR DEVICES USING ATOMIC LAYER DEPOSITION	PARK KI-YEON	2007-11-08	—	—	US	disclosed
US-20050051828-A1	Methods of forming metal thin films, lanthanum oxide films, and high dielectric films for semiconductor devices using atomic layer deposition	PARK KI-YEON (KR)	2005-03-10	—	—	US	disclosed