SCHEMBL4038152

SCHEMBL4038152

CCC[Si](OC)(OC)OCOCC(COC)OC

nearest known ligand 0.36

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
LPAR1 Q92633 7/20 0.36
LPAR3 Q9UBY5 7/20 0.36
LPAR6 P43657 5/20 0.36
LPAR4 Q99677 5/20 0.36
LPAR5 Q9H1C0 5/20 0.36
LPAR2 Q9HBW0 5/20 0.36
PRKD3 O94806 1/20 0.34
PRKCG P05129 1/20 0.34
PRKCB P05771 1/20 0.34
PRKCA P17252 1/20 0.34
PRKCH P24723 1/20 0.34
PRKCI P41743 1/20 0.34
PRKCE Q02156 1/20 0.34
PRKCQ Q04759 1/20 0.34
PRKCZ Q05513 1/20 0.34
PRKCD Q05655 1/20 0.34
PRKD1 Q15139 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4629518 0.78 LMNA (0.32)
SCHEMBL29091175 0.77 TSHR (0.35)
SCHEMBL6238542 0.77 USP2 (0.42)
Alcohol SCHEMBL29086643 0.76
SCHEMBL4547626 0.75 PRKD3 (0.37) LPAR1LPAR3LPAR6LPAR4LPAR5
SCHEMBL27607404 0.75 LMNA (0.38) LPAR1LPAR3LPAR6LPAR4LPAR5
SCHEMBL28920707 0.74 LMNA (0.31)
SCHEMBL28641894 0.74 LMNA (0.41) LPAR1LPAR3LPAR6LPAR4LPAR5
SCHEMBL3882456 0.72 LPAR1 (0.44) LPAR1LPAR3LPAR6LPAR4LPAR5
SCHEMBL28663011 0.70 LMNA (0.37)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7514202-B2 Thermal acid generator, resist undercoat material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-04-07 US disclosed
US-20070264596-A1 Thermal acid generator, resist undercoat material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-11-15 US disclosed
US-20050277058-A1 Antireflective film-forming composition, method for manufacturing the same, and antireflective film and pattern formation method using the same SHIN-ETSU CHEMICAL CO., LTD. 2005-12-15 US disclosed