⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL23051669 | 0.87 | — | — | |
| SCHEMBL7878726 | 0.87 | — | — | |
| SCHEMBL7477749 | 0.87 | — | — | |
| SCHEMBL25411922 | 0.87 | — | — | |
| SCHEMBL928925 | 0.87 | — | — | |
| SCHEMBL2021982 | 0.75 | — | — | |
| Water SCHEMBL408458 | 0.75 | — | — | |
| SCHEMBL28209050 | 0.75 | — | — | |
| Water SCHEMBL8083667 | 0.75 | — | — | |
| SCHEMBL7721917 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 30 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20040255856-A1 | Method and device for depositing a plurality of layers on a substrate | AIXTRON AG, A GERMANY CORPORATION (DE) | 2004-12-23 | — | — | US | claimed |
| US-20250318146-A1 | SEMICONDUCTOR DEVICE, INTEGRATED CIRCUIT AND METHOD OF MANUFACTURING THE SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-10-09 | — | — | US | disclosed |
| US-12419057-B2 | Semiconductor device, integrated circuit and method of manufacturing the same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (TW) | 2025-09-16 | — | — | US | disclosed |
| US-20240389357-A1 | SEMICONDUCTOR DEVICE, INTEGRATED CIRCUIT AND METHOD OF MANUFACTURING THE SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-11-21 | — | — | US | disclosed |
| US-20240373650-A1 | SEMICONDUCTOR DEVICE, INTEGRATED CIRCUIT AND METHOD OF MANUFACTURING THE SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-11-07 | — | — | US | disclosed |
| US-12133396-B2 | Semiconductor device, integrated circuit and method of manufacturing the same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (TW) | 2024-10-29 | — | — | US | disclosed |
| US-12114511-B2 | Semiconductor device, integrated circuit and method of manufacturing the same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (TW) | 2024-10-08 | — | — | US | disclosed |
| US-20230065619-A1 | SEMICONDUCTOR DEVICE, INTEGRATED CIRCUIT AND METHOD OF MANUFACTURING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (TW) | 2023-03-02 | — | — | US | disclosed |
| US-20230063125-A1 | SEMICONDUCTOR DEVICE, INTEGRATED CIRCUIT AND METHOD OF MANUFACTURING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (TW) | 2023-03-02 | — | — | US | disclosed |
| US-20230066392-A1 | SEMICONDUCTOR DEVICE, INTEGRATED CIRCUIT AND METHOD OF MANUFACTURING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (TW) | 2023-03-02 | — | — | US | disclosed |
| CN-103681688-A | Substrate including oxide thin film transistor, method for fabricating the same, and driving circuit | LG DISPLAY CO LTD | 2014-03-26 | — | — | CN | disclosed |
| US-20140070218-A1 | DISPLAY DEVICE | SAMSUNG DISPLAY CO., LTD. (KR) | 2014-03-13 | — | — | US | disclosed |
| US-20140061653-A1 | SUBSTRATE INCLUDING OXIDE THIN FILM TRANSISTOR, METHOD FOR FABRICATING THE SAME, AND DRIVING CIRCUIT FOR LIQUID CRYSTAL DISPLAY DEVICE USING THE SAME | LG DISPLAY CO., LTD. (KR) | 2014-03-06 | — | — | US | disclosed |
| CN-103426934-A | Oxide thin film transistor, method for fabricating tft, array substrate for display device and method for fabricating the same | LG DISPLAY CO LTD | 2013-12-04 | — | — | CN | disclosed |
| US-20130313530-A1 | OXIDE THIN FILM TRANSISTOR, METHOD FOR FABRICATING TFT, DISPLAY DEVICE HAVING TFT, AND METHOD FOR FABRICATING THE SAME | LG DISPLAY CO., LTD. (KR) | 2013-11-28 | — | — | US | disclosed |
| US-20130313546-A1 | Oxide Thin Film Transistor, Method for Fabricating TFT, Array Substrate for Display Device and Method for Fabricating the Same | LG DISPLAY CO., LTD. (KR) | 2013-11-28 | — | — | US | disclosed |
| US-20130020567-A1 | THIN FILM TRANSISTOR HAVING PASSIVATION LAYER COMPRISING METAL AND METHOD FOR FABRICATING THE SAME | KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY (KR) | 2013-01-24 | — | — | US | disclosed |
| US-20120298985-A1 | THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME | ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE (KR) | 2012-11-29 | — | — | US | disclosed |
| US-20120021138-A1 | NANOLAYER DEPOSITION PROCESS FOR COMPOSITE FILMS | TEGAL CORPORATION (US) | 2012-01-26 | — | — | US | disclosed |
| US-20040255856-A1 | Method and device for depositing a plurality of layers on a substrate | AIXTRON AG, A GERMANY CORPORATION (DE) | 2004-12-23 | — | — | US | disclosed |