Known targets — ChEMBL curated mechanism
ABCC9ABL1ACEACHEACVR1ADORA1ADORA2AADORA2BADORA3ADRA1AADRA1BADRA1DADRA2AADRA2BADRA2CADRB1ADRB2ADRB3AGTR1ALOX5ATP4AATP4BBCRBTKCACNA1ACACNA1BCACNA1CCACNA1DCACNA1ECACNA1FCACNA1GCACNA1HCACNA1ICACNA1SCACNA2D1CACNA2D2CACNA2D3CACNA2D4CACNB1CACNB2CACNB3CACNB4CACNG1CACNG2CACNG3CACNG4CACNG5CACNG6CACNG7CACNG8CALCRLCFBCHRM1CHRM2CHRM3CHRM4CHRM5CHRNA1CHRNB1CHRNDCHRNECHRNGCRBNCUL4ACXCR1CXCR2DDB1DDCDHFRDPP4DRD2DRD3DRD4EGFRERBB2ERBB4ESR1ESR2FDPSFKBP1AFLT1FLT3FLT4GARTGHSRGRIA1GRIA2GRIA3GRIA4GRIK1GRIK2GRIK3GRIK4GRIK5GRIN2AGSK3AGSK3BHDAC1HDAC10HDAC11HDAC2HDAC3HDAC4HDAC5HDAC6HDAC7HDAC8HDAC9HRH1HTR1AHTR1BHTR1DHTR1EHTR1FHTR2AHTR2BHTR2CHTR3AHTR3BHTR3CHTR3DHTR3EHTR4HTR5AHTR6HTR7IDH1IDH2IMPA1ITGA2BITGB3JAK1JAK2JAK3KCNJ11KCNK3KCNK9KDRKITMEN1METMMP1MMP13MMP7MMP8NANOD2NS5bODC1OPG057OPRD1OPRK1OPRM1PPARP1PARP2PDE3APDE3BPDE4APDE4BPDE4CPDE4DPDGFRBPIK3CAPIK3CBPIK3CDPIK3CGPIK3R1PIK3R2PIK3R3PIK3R5PKLRPPARDPPATPTGS1PTGS2RBX1ROCK1ROCK2RRM1RRM2RRM2BSCN10ASCN11ASCN1ASCN2ASCN3ASCN4ASCN5ASCN7ASCN8ASCN9ASCNN1ASCNN1BSCNN1GSIGMAR1SLC10A2SLC5A2SLC6A2SLC6A3SLC6A4SLC9A3SYKTACR1THRATHRBTOP1TUBA1ATUBA1BTUBA1CTUBA3CTUBA3ETUBA4ATUBBTUBB1TUBB2ATUBB2BTUBB3TUBB4ATUBB4BTUBB6TUBB8TYK2TYMSVDRampCblablaT-3blaT-4blaT-5blaT-6blaUOE-1dacAdacBdacCfolAfolPftsIgyrAgyrBileSmecAmrcAmrcBmrdAparCparEpbp2pbp4pbpApbpFrplArplBrplCrplDrplErplFrplIrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmE2rpmFrpmGrpmG1rpmG2rpmG3rpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUthyAykgMykgO
The experimentally established mechanism targets of Water. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Water SCHEMBL8083667 | 1.00 | — | — | |
| Water SCHEMBL3559541 | 1.00 | — | — | |
| SCHEMBL928925 | 0.87 | — | — | |
| Water SCHEMBL1535938 | 0.87 | — | — | |
| Water SCHEMBL27540956 | 0.87 | — | — | |
| SCHEMBL23051669 | 0.87 | — | — | |
| Water SCHEMBL670139 | 0.87 | — | — | |
| Water SCHEMBL865018 | 0.87 | — | — | |
| SCHEMBL25411922 | 0.87 | — | — | |
| Water SCHEMBL7477754 | 0.87 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 42 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20040255856-A1 | Method and device for depositing a plurality of layers on a substrate | AIXTRON AG, A GERMANY CORPORATION (DE) | 2004-12-23 | — | — | US | claimed |
| US-20250318146-A1 | SEMICONDUCTOR DEVICE, INTEGRATED CIRCUIT AND METHOD OF MANUFACTURING THE SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-10-09 | — | — | US | disclosed |
| US-12419057-B2 | Semiconductor device, integrated circuit and method of manufacturing the same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (TW) | 2025-09-16 | — | — | US | disclosed |
| CN-119730367-A | Stacked integrated circuit device | 三星电子株式会社 | 2025-03-28 | — | — | CN | disclosed |
| CN-119451190-A | Integrated circuit device | 三星电子株式会社 | 2025-02-14 | — | — | CN | disclosed |
| CN-119092542-A | Semiconductor device with a semiconductor layer having a plurality of semiconductor layers | 三星电子株式会社 | 2024-12-06 | — | — | CN | disclosed |
| US-20240389357-A1 | SEMICONDUCTOR DEVICE, INTEGRATED CIRCUIT AND METHOD OF MANUFACTURING THE SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-11-21 | — | — | US | disclosed |
| US-20240373650-A1 | SEMICONDUCTOR DEVICE, INTEGRATED CIRCUIT AND METHOD OF MANUFACTURING THE SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-11-07 | — | — | US | disclosed |
| US-12133396-B2 | Semiconductor device, integrated circuit and method of manufacturing the same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (TW) | 2024-10-29 | — | — | US | disclosed |
| CN-118841395-A | Semiconductor device with a semiconductor layer having a plurality of semiconductor layers | 三星电子株式会社 | 2024-10-25 | — | — | CN | disclosed |
| US-20140061653-A1 | SUBSTRATE INCLUDING OXIDE THIN FILM TRANSISTOR, METHOD FOR FABRICATING THE SAME, AND DRIVING CIRCUIT FOR LIQUID CRYSTAL DISPLAY DEVICE USING THE SAME | LG DISPLAY CO., LTD. (KR) | 2014-03-06 | — | — | US | disclosed |
| CN-103426934-A | Oxide thin film transistor, method for fabricating tft, array substrate for display device and method for fabricating the same | LG DISPLAY CO LTD | 2013-12-04 | — | — | CN | disclosed |
| US-20130313546-A1 | Oxide Thin Film Transistor, Method for Fabricating TFT, Array Substrate for Display Device and Method for Fabricating the Same | LG DISPLAY CO., LTD. (KR) | 2013-11-28 | — | — | US | disclosed |
| US-20130313530-A1 | OXIDE THIN FILM TRANSISTOR, METHOD FOR FABRICATING TFT, DISPLAY DEVICE HAVING TFT, AND METHOD FOR FABRICATING THE SAME | LG DISPLAY CO., LTD. (KR) | 2013-11-28 | — | — | US | disclosed |
| US-20130020567-A1 | THIN FILM TRANSISTOR HAVING PASSIVATION LAYER COMPRISING METAL AND METHOD FOR FABRICATING THE SAME | KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY (KR) | 2013-01-24 | — | — | US | disclosed |
| US-20120298985-A1 | THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME | ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE (KR) | 2012-11-29 | — | — | US | disclosed |
| US-20120021138-A1 | NANOLAYER DEPOSITION PROCESS FOR COMPOSITE FILMS | TEGAL CORPORATION (US) | 2012-01-26 | — | — | US | disclosed |
| US-20040255856-A1 | Method and device for depositing a plurality of layers on a substrate | AIXTRON AG, A GERMANY CORPORATION (DE) | 2004-12-23 | — | — | US | disclosed |
| CN-1076517-C | Pruduction of semiconductor unit | MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (JP) | 2001-12-19 | — | — | CN | disclosed |
| CN-1112289-A | Pruduction of semiconductor unit | MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (JP) | 1995-11-22 | — | — | CN | disclosed |