⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL29167371 | 0.82 | — | — | |
| SCHEMBL31197910 | 0.82 | — | — | |
| SCHEMBL828558 | 0.82 | — | — | |
| Fluoride SCHEMBL309409 | 0.82 | — | — | |
| Water SCHEMBL20873118 | 0.82 | — | — | |
| SCHEMBL828559 | 0.82 | — | — | |
| SCHEMBL15484185 | 0.82 | — | — | |
| Water SCHEMBL568983 | 0.82 | — | — | |
| SCHEMBL10719239 | 0.82 | — | — | |
| SCHEMBL10719241 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 219 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-120157478-A | Lanthanum and hafnium co-doped yttrium titanate composite coating material and preparation method thereof | 电子科技大学 | 2025-06-17 | — | — | CN | claimed |
| CN-118598659-A | Lanthanum-hafnium co-doped silver niobate-based antiferroelectric ceramic material and preparation method thereof | 内蒙古科技大学 | 2024-09-06 | — | — | CN | claimed |
| CN-110957273-B | Method of manufacturing semiconductor device and full-wrap gate field effect transistor | 台湾积体电路制造股份有限公司 | 2023-05-26 | — | — | CN | claimed |
| US-10998042-B2 | Memory cells with tunneling materials including lanthanum oxide | MICRON TECHNOLOGY, INC. (US) | 2021-05-04 | — | — | US | claimed |
| US-10892340-B2 | Memory cell structures | MICRON TECHNOLOGY, INC. (US) | 2021-01-12 | — | — | US | claimed |
| CN-111943669-A | Preparation method for synthesizing lanthanum hafnate powder by sol-gel method | 西北工业大学 | 2020-11-17 | — | — | CN | claimed |
| CN-110957273-A | Method of manufacturing semiconductor device and all-around gate field effect transistor | 台湾积体电路制造股份有限公司 | 2020-04-03 | — | — | CN | claimed |
| US-20190198631-A1 | MEMORY CELL STRUCTURES | MICRON TECHNOLOGY, INC. | 2019-06-27 | — | — | US | claimed |
| US-20190122733-A1 | MULTIFUNCTIONAL MEMORY CELLS | MICRON TECHNOLOGY, INC. | 2019-04-25 | — | — | US | claimed |
| US-10262736-B2 | Multifunctional memory cells | MICRON TECHNOLOGY, INC. (US) | 2019-04-16 | — | — | US | claimed |
| CN-101752424-B | Thin film transistor | IND TECH RES INST | 2011-10-26 | — | — | CN | claimed |
| CN-101752424-A | Thin film transistor | IND TECH RES INST | 2010-06-23 | — | — | CN | claimed |
| US-7612422-B2 | Structure for dual work function metal gate electrodes by control of interface dipoles | TEXAS INSTRUMENTS INCORPORATED (US) | 2009-11-03 | — | — | US | claimed |
| US-20080308876-A1 | Semiconductor device and method of manufacturing the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2008-12-18 | — | — | US | claimed |
| EP-1992442-A1 | TOOL FOR FRICTION STIR WELDING, METHOD OF WELDING WITH THE SAME, AND PROCESSED OBJECT OBTAINED BY THE SAME | FURUYA METAL CO., LTD. (JP) | 2008-11-19 | — | — | EP | claimed |
| WO-2008127484-A2 | STRUCTURE AND METHOD FOR DUAL WORK FUNCTION METAL GATE ELECTRODES BY CONTROL OF INTERFACE DIPOLES | TEXAS INSTRUMENTS INCORPORATED (US) | 2008-10-23 | — | — | WO | claimed |
| US-20080157228-A1 | STRUCTURE AND METHOD FOR DUAL WORK FUNCTION METAL GATE ELECTRODES BY CONTROL OF INTERFACE DIPOLES | TEXAS INSTRUMENTS INCORPORATED | 2008-07-03 | — | — | US | claimed |
| WO-2008054689-A1 | METHODS OF FORMING DIELECTRIC STRUCTURES IN SEMICONDUCTOR DEVICES | MICRON TECHNOLOGY, INC. (US) | 2008-05-08 | — | — | WO | claimed |
| US-20080099829-A1 | Mosfet devices and systems with nitrided gate insulators and methods for forming | MICRON TECHNOLOGY, INC. | 2008-05-01 | — | — | US | claimed |
| WO-2007121007-A2 | METHOD AND APPARATUS FOR FABRICATING A HIGH DIELECTRIC CONSTANT TRANSISTOR GATE USING A LOW ENERGY PLASMA SYSTEM | APPLIED MATERIALS, INC. (US) | 2007-10-25 | — | — | WO | claimed |