⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL828559 | 1.00 | — | — | |
| Water SCHEMBL19876570 | 0.87 | — | — | |
| SCHEMBL28251064 | 0.82 | — | — | |
| SCHEMBL409732 | 0.82 | — | — | |
| SCHEMBL28150308 | 0.82 | — | — | |
| SCHEMBL77845 | 0.82 | — | — | |
| SCHEMBL29371232 | 0.82 | — | — | |
| SCHEMBL1135067 | 0.82 | — | — | |
| SCHEMBL1135066 | 0.82 | — | — | |
| SCHEMBL77846 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-103247672-B | Semiconductor devices and its manufacture method | 瑞萨电子株式会社 | 2018-05-15 | — | — | CN | disclosed |
| US-9953839-B2 | Gate-stack structure with a diffusion barrier material | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2018-04-24 | — | — | US | disclosed |
| US-20180053656-A1 | Gate-Stack Structure with a Diffusion Barrier Material | ELPIS TECHNOLOGIES INC. (CA) | 2018-02-22 | — | — | US | disclosed |
| US-20150255564-A1 | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE | RENESAS ELECTRONICS CORPORATION (JP) | 2015-09-10 | — | — | US | disclosed |
| US-9076857-B2 | Semiconductor device and manufacturing method thereof | RENESAS ELECTRONICS CORPORATION (JP) | 2015-07-07 | — | — | US | disclosed |
| US-20130207203-A1 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | RENESAS ELECTRONICS CORPORATION (JP) | 2013-08-15 | — | — | US | disclosed |
| CN-103247672-A | Semiconductor device and manufacturing method thereof | RENESAS ELECTRONICS CORP | 2013-08-14 | — | — | CN | disclosed |
| US-8143676-B2 | Semiconductor device having a high-dielectric-constant gate insulating film | KABUSHIKI KAISHA TOSHIBA (JP) | 2012-03-27 | — | — | US | disclosed |
| US-20090114996-A1 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | KABUSHIKI KAISHA TOSHIBA (JP) | 2009-05-07 | — | — | US | disclosed |