SCHEMBL4100963

SCHEMBL4100963

C=C(C)C(=O)OCCCC(C)O[Si](C)(C)OCC

nearest known ligand 0.46

Predicted protein targets (top 7)

geneUniProtsupporting neighboursconfidence
TSHR P16473 3/20 0.46
THRB P10828 1/20 0.44
POLB P06746 1/20 0.37
APEX1 P27695 1/20 0.37
HTT P42858 1/20 0.37
TDP1 Q9NUW8 1/20 0.37
ALDH1A1 P00352 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL81025 0.89 TSHR (0.46) TSHRTHRBPOLBAPEX1HTT
SCHEMBL28044455 0.87 TSHR (0.47) TSHRTHRBPOLBAPEX1HTT
SCHEMBL31709677 0.86 TSHR (0.44) TSHRTHRBPOLBAPEX1HTT
SCHEMBL31407283 0.86 TSHR (0.45) TSHRTHRBPOLBAPEX1HTT
SCHEMBL29025732 0.84 TSHR (0.49) TSHRTHRBPOLBAPEX1HTT
SCHEMBL27689363 0.84 TSHR (0.44) TSHRTHRBPOLBAPEX1HTT
SCHEMBL28127850 0.83 TSHR (0.41) TSHRTHRBPOLBAPEX1HTT
SCHEMBL28311106 0.82 TSHR (0.51) TSHRTHRBPOLBAPEX1HTT
SCHEMBL27635964 0.80 TSHR (0.45) TSHRTHRBPOLBAPEX1HTT
SCHEMBL31122099 0.80 TSHR (0.40) TSHRTHRBPOLBAPEX1HTT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20160359078-A1 COMPOSITION FOR FORMING N-TYPE DIFFUSION LAYER, METHOD FOR FORMING N-TYPE DIFFUSION LAYER, METHOD OF PRODUCING SEMICONDUCTOR SUBSTRATE WITH N-TYPE DIFFUSION LAYER, AND METHOD FOR PRODUCING PHOTOVOLTAIC CELL ELEMENT HITACHI CHEMICAL COMPANY, LTD. (JP) 2016-12-08 US disclosed
EP-3041030-A1 COMPOSITION FOR FORMING N-TYPE DIFFUSION LAYER, METHOD FOR FORMING N-TYPE DIFFUSION LAYER, METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE WITH N-TYPE DIFFUSION LAYER, AND METHOD FOR MANUFACTURING SOLAR CELL ELEMENT Hitachi Chemical Company, Ltd. (JP) 2016-07-06 EP disclosed
CN-105518828-A Composition for forming n-type diffusion layer, method for forming n-type diffusion layer, method for producing semiconductor substrate with n-type diffusion layer, and method for manufacturing solar cell element HITACHI CHEMICAL CO LTD 2016-04-20 CN disclosed
EP-1996661-B1 FOULING RELEASE COMPOSITION JOTUN AS (NO) 2014-05-14 EP disclosed
CN-101437909-B descaling composition JOTUN AS 2013-07-03 CN disclosed
US-20090221752-A1 FOULING RELEASE COMPOSITION JOTUN AS (NO) 2009-09-03 US disclosed
CN-101437909-A descaling composition JOTUN AS (NO) 2009-05-20 CN disclosed
EP-1996661-A1 FOULING RELEASE COMPOSITION Jotun AS (NO) 2008-12-03 EP disclosed
WO-2007102741-A1 FOULING RELEASE COMPOSITION JOTUN AS (NO) 2007-09-13 WO disclosed