SCHEMBL4103223

SCHEMBL4103223

Cc1ccc(S(=O)(=O)Oc2ccc(C(S)Cc3ccccc3)cc2)cc1

nearest known ligand 0.49

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
▸ ALDH1A1 P00352 3/20 0.47
▸ MEN1 O00255 1/20 0.47
▸ MAPT P10636 1/20 0.47
▸ HTT P42858 1/20 0.47
▸ KMT2A Q03164 1/20 0.47
▸ P2RX7 Q99572 6/20 0.45
▸ PPARG P37231 1/20 0.44
▸ LMNA P02545 1/20 0.42
▸ TDP1 Q9NUW8 1/20 0.42
▸ CNR2 P34972 2/20 0.42
▸ CA2 P00918 1/20 0.41
▸ CA7 P43166 1/20 0.41
▸ ENPP2 Q13822 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15477515 0.82 ALDH1A1 (0.52) ALDH1A1MEN1MAPTHTTKMT2A
SCHEMBL15936332 0.79 ENPP1 (0.55) ALDH1A1HTTPPARGLMNATDP1
SCHEMBL3841899 0.79 ALDH1A1 (0.61) ALDH1A1MEN1MAPTHTTKMT2A
SCHEMBL1824280 0.79 ALDH1A1 (0.51) ALDH1A1MEN1MAPTHTTKMT2A
SCHEMBL1828145 0.79 MEN1 (0.46) ALDH1A1MEN1MAPTHTTKMT2A
SCHEMBL1826570 0.78 ALDH1A1 (0.53) ALDH1A1MEN1MAPTHTTKMT2A
SCHEMBL1823691 0.78 SMN1; SMN2 (0.57) ALDH1A1MEN1MAPTHTTKMT2A
SCHEMBL2843516 0.77 CXCR2 (0.43) ALDH1A1HTTKMT2APPARG
SCHEMBL346667 0.77 HTT (0.59) ALDH1A1MEN1MAPTHTTKMT2A
SCHEMBL2237142 0.77 TDP1 (0.67) ALDH1A1MEN1MAPTHTTKMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9134611-B2 Composition for forming resist underlayer film and pattern-forming method JSR CORPORATION (JP) 2015-09-15 — — US disclosed
US-20140048512-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM AND PATTERN-FORMING METHOD JSR CORPORATION (JP) 2014-02-20 — — US disclosed
US-20090221777-A1 PHOTOSENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2009-09-03 — — US disclosed
US-7202016-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2007-04-10 — — US disclosed
US-20050214680-A1 Radiation-sensitive resin composition MIYAJI MASAAKI 2005-09-29 — — US disclosed
US-6933094-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2005-08-23 — — US disclosed
US-20020058201-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2002-05-16 — — US disclosed
EP-1193558-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2002-04-03 — — EP disclosed
US-6235446-B1 MIXTURE OF P-HYDROXYSTYRENE, ACRYLATED ESTER JSR CORPORATION (JP) 2001-05-22 — — US disclosed
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