Zinc Ion

Zinc Ion

SCHEMBL414055

[Mn+2].[S-2].[S-2].[Zn+2]

nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Zinc Ion SCHEMBL30426966 0.87
Zinc Ion SCHEMBL9599961 0.87
Zinc Ion SCHEMBL9348381 0.82 GPR39 (0.33)
Zinc Ion SCHEMBL634081 0.82
Zinc Ion SCHEMBL10427052 0.82 GPR39 (0.33)
Zinc Ion SCHEMBL4757897 0.82 GPR39 (0.33)
Zinc Ion SCHEMBL7794532 0.82 GPR39 (0.33)
Zinc Ion SCHEMBL27539 0.82
SCHEMBL2421770 0.82
SCHEMBL20477601 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 41 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-118714687-A Monomer coupling electroluminescent device 上海洞舟实业有限公司 2024-09-27 CN claimed
CN-118675441-A Wireless driving electroluminescent device 上海洞舟实业有限公司 2024-09-20 CN claimed
CN-118398809-A Composite electrode material, preparation method, application and battery 深蓝汽车科技有限公司 2024-07-26 CN claimed
CN-117504954-A Microfluidic chip 北京大学深圳研究生院 2024-02-06 CN claimed
WO-2024021035-A1 MICROFLUIDIC CHIP 北京大学深圳研究生院 2024-02-01 WO claimed
CN-116963517-A Alternating current driven electroluminescent device based on zwitterionic polymer and preparation method thereof 北京大学深圳研究生院 2023-10-27 CN claimed
US-20120018709-A1 ORGANIC ELECTROLUMINESCENCE ELEMENT AND METHOD OF MANUFACTURE OF SAME FUJI ELECTRIC CO., LTD. (JP) 2012-01-26 US claimed
US-20040159854-A1 Thin film device and its fabrication method TOKYO INSTITUTE OF TECHNOLOGY (JP) 2004-08-19 US claimed
EP-1403911-A2 Thin film device and its fabrication method Tokyo Institute of Technology (JP) 2004-03-31 EP claimed
US-5646419-A n-type wide bandgap semiconductors grown on a p-type layer to form hole injection pn heterojunctions and methods of fabricating the same CALIFORNIA INSTITUTE OF TECHNOLOGY (US) 1997-07-08 US claimed
CN-118714687-A Monomer coupling electroluminescent device 上海洞舟实业有限公司 2024-09-27 CN disclosed
CN-118675441-A Wireless driving electroluminescent device 上海洞舟实业有限公司 2024-09-20 CN disclosed
CN-118398809-A Composite electrode material, preparation method, application and battery 深蓝汽车科技有限公司 2024-07-26 CN disclosed
CN-118325602-A Preparation method of temperature quenching fluorescent material 上海洞舟实业有限公司 2024-07-12 CN disclosed
CN-117504954-A Microfluidic chip 北京大学深圳研究生院 2024-02-06 CN disclosed
CN-1352225-A Process for preapring manganese zinc sulfide blended nanometer fluorescent powder in batchs CHANGCHUN OPTICS FINE MECH (CN) 2002-06-05 CN disclosed
US-20010053082-A1 ELECTROLUMINESCENT VEHICLE LAMP OSRAM SYLVANIA INC. 2001-12-20 US disclosed
EP-1110816-A2 Electroluminescent vehicle lamp OSRAM SYLVANIA INC. (US) 2001-06-27 EP disclosed
US-5646419-A n-type wide bandgap semiconductors grown on a p-type layer to form hole injection pn heterojunctions and methods of fabricating the same CALIFORNIA INSTITUTE OF TECHNOLOGY (US) 1997-07-08 US disclosed
US-5451340-A Infrared emissive thin film electroluminescent material WESTINGHOUSE ELECTRIC CORPORATION (US) 1995-09-19 US disclosed