SCHEMBL415325

SCHEMBL415325

C=CC(=O)OC1C2CC3C(=O)OC1C3C2

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL22399918 1.00
SCHEMBL9975638 1.00
SCHEMBL14549206 1.00
SCHEMBL12651638 0.89
SCHEMBL12190159 0.89
SCHEMBL525146 0.87
SCHEMBL10064058 0.87
SCHEMBL3303720 0.87 ATM (0.42)
SCHEMBL1697119 0.85 TSHR (0.34)
SCHEMBL13943435 0.85

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 761 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-112239623-B Polymer for display device 罗门哈斯电子材料有限责任公司 2022-10-04 CN claimed
WO-2025106697-A1 BIO-BASED COMPOSITIONS FOR PHOTORESISTS AND PATTERNING HUSTAD PHILLIP DENE (US) 2025-05-22 WO disclosed
US-20230266675-A1 INSPECTION METHOD, METHOD FOR PRODUCING COMPOSITION, AND METHOD FOR VERIFYING COMPOSITION FUJIFILM CORPORATION (JP) 2023-08-24 US disclosed
US-20230266675-A1 INSPECTION METHOD, METHOD FOR PRODUCING COMPOSITION, AND METHOD FOR VERIFYING COMPOSITION FUJIFILM CORPORATION (JP) 2023-08-24 US disclosed
CN-112239623-B Polymer for display device 罗门哈斯电子材料有限责任公司 2022-10-04 CN disclosed
US-20210341839-A1 FLUOROCARBOXYLIC ACID-CONTAINING MONOMER, FLUOROCARBOXYLIC ACID-CONTAINING POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-11-04 US disclosed
US-20210011378-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING THE SAME, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2021-01-14 US disclosed
US-10377692-B2 Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2019-08-13 US disclosed
US-10377692-B2 Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2019-08-13 US disclosed
US-10372039-B2 Resist underlayer film forming composition containing silicon having ester group NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2019-08-06 US disclosed
US-20050053861-A1 Onium salt compound and radiation-sensitive resin composition JSR CORPORATION (JP) 2005-03-10 US disclosed
US-20040248031-A1 5-Methylene-1,3-dioxolan-4-one derivatives, process for their production, polymers of the derivatives, resist compositions, and pattern formation process MITSUBISHI CHEMICAL CORPORATION (JP) 2004-12-09 US disclosed
US-20040202954-A1 Positive resist composition and pattern formation method using the same FUJI PHOTO FILM CO., LTD. 2004-10-14 US disclosed
EP-1447403-A1 5-METHYLENE-1,3-DIOXOLAN-4-ONE DERIVATIVES, PROCESS FOR THEIR PRODUCTION, POLYMERS OF THE DERIVATIVES, RESIST COMPOSITIONS, AND PATTERN FORMATION PROCESS Mitsubishi Rayon Co., Ltd. (JP) 2004-08-18 EP disclosed
US-6730451-B2 FLUOROACRYLATE POLYMERS; TRANSPARENCY; PREVENTING NEGATIVE WORKING; LOW ABSORPTION OF FLUORINE EXCIMER LASER LIGHT; HIGH TRANSMITTANCE TO VACUUM ULTRAVIOLET RADITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-05-04 US disclosed
US-6677419-B1 REACTING STOICHIOMETRIC EXCESS OF UNSATURATED ALICYCLIC MONOMER WITH ANOTHER UNSATURATED MONOMER, HAVING LESS THAN TWO ELECTRON-WITHDRAWING GROUPS APPENDED TO UNSATURATION, IN PRESENCE OF FREE RADICAL INITIATOR INTERNATIONAL BUSINESS MACHINES CORPORATION 2004-01-13 US disclosed
US-20030180659-A1 Resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2003-09-25 US disclosed
US-20030148214-A1 Resins for resists and chemically amplifiable resist compositions MITSUBISHI CHEMICAL CORPORATION (JP) 2003-08-07 US disclosed
EP-1304340-A1 RESINS FOR RESISTS AND CHEMICALLY AMPLIFIABLE RESIST COMPOSITIONS Mitsubishi Rayon Co., Ltd. (JP) 2003-04-23 EP disclosed
US-20010010890-A1 Polymers, chemical amplification resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-08-02 US disclosed