SCHEMBL4169792

SCHEMBL4169792

CC=CC[Si](CC=CC)(OC)OC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4764561 1.00
SCHEMBL931502 0.89
SCHEMBL931354 0.89
SCHEMBL930298 0.85
SCHEMBL929546 0.85
SCHEMBL472954 0.77
SCHEMBL4771759 0.77
SCHEMBL3343490 0.74
SCHEMBL31351426 0.74
SCHEMBL27871174 0.74

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8199404-B2 Anti-reflection coating, optical member, exchange lens unit and imaging device Pentax Ricoh Imaging Company, Ltd. (JP) 2012-06-12 US disclosed
US-20090168184-A1 ANTI-REFLECTION COATING, OPTICAL MEMBER, EXCHANGE LENS UNIT AND IMAGING DEVICE HOYA CORPORATION (JP) 2009-07-02 US disclosed
EP-1832351-B1 Low dielectric materials and methods for making same AIR PROD & CHEM (US) 2008-11-12 EP disclosed
US-7291567-B2 Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device JSR CORPORATION (JP) 2007-11-06 US disclosed
EP-1837086-A2 Low dielectric materials and methods for making same Air Products and Chemicals, Inc. (US) 2007-09-26 EP disclosed
EP-1832351-A2 Low dielectric materials and methods for making same Air Products and Chemicals, Inc. (US) 2007-09-12 EP disclosed
US-20060024980-A1 Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device JSR CORPORATION (JP) 2006-02-02 US disclosed
EP-1619226-A1 Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device JSR Corporation (JP) 2006-01-25 EP disclosed
US-20050260420-A1 Low dielectric materials and methods for making same VERSUM MATERIALS US, LLC 2005-11-24 US disclosed
EP-1464410-A1 Low dielectric materials and methods for making same AIR PRODUCTS AND CHEMICALS, INC. (US) 2004-10-06 EP disclosed