SCHEMBL417334

SCHEMBL417334

[Hf].[Zr]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL27965642 1.00
SCHEMBL5181503 1.00
SCHEMBL28223214 1.00
SCHEMBL16896236 0.82
SCHEMBL4391743 0.82
Hydrochloric Acid SCHEMBL6421093 0.82
SCHEMBL11044337 0.82
SCHEMBL4090510 0.82
Hydrochloric Acid SCHEMBL9777386 0.82
SCHEMBL2159576 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Appears in 2025 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-118080860-B Zirconium-hafnium dissimilar metal for nuclear and spark plasma pressurized sintering connection method SICHUAN UNIVERSITY (CN) 2026-05-26 CN claimed
CN-121718727-B Zirconium-hafnium extractant, extraction system and method for separating and purifying zirconium-hafnium 中国科学院赣江创新研究院 2026-05-19 CN claimed
US-20260135034-A1 CAPACITOR AND METHOD FOR MANUFACTURING SAME INDUSTRY ACADEMIC COOPERATION FOUNDATION YONSEI UNIV (KR) 2026-05-14 US claimed
CN-122028658-A Preparation method of hafnium zirconium oxygen ferroelectric film based on decoupling oxidation and annealing process 中国科学院上海技术物理研究所 2026-05-12 CN claimed
US-12615769-B2 Three-dimensional nor memory string arrays of thin-film ferroelectric transistors SUNRISE MEMORY CORPORATION (US) 2026-04-28 US claimed
US-20260075877-A1 INTEGRATED PROCESS AND PROCESSING SYSTEM FOR MANUFACTURING PMOS TRANSISTORS APPLIED MATERIALS, INC. (US) 2026-03-12 US claimed
US-20260068187-A1 METHODS OF FORMING A SEMICONDUCTOR STACK ON A SUBSTRATE INCLUDING A SEMIMETAL LINER ASM IP HOLDING BV (NL) 2026-03-05 US claimed
EP-4493317-B1 CATALYTIC MATERIAL BASED ON A GROUP VIB ELEMENT AND A GROUP IVB ELEMENT FOR THE PRODUCTION OF HYDROGEN BY ELECTROLYSIS OF WATER IFP ENERGIES NOW (FR) 2026-02-25 EP claimed
US-20260047179-A1 MULTI-THRESHOLD VOLTAGE INTEGRATION SCHEMES FOR SEMICONDUCTOR DEVICES APPLIED MATERIALS, INC. (US) 2026-02-12 US claimed
US-12550382-B2 Thin-film storage transistor with ferroelectric storage layer SUNRISE MEMORY CORPORATION (US) 2026-02-10 US claimed
EP-0368069-A2 Process for preparing polycrystalline cubic boron nitride ceramic masses GENERAL ELECTRIC COMPANY (US) 1990-05-16 EP claimed
US-4874475-A USING ALKALI(EARTH) CHLORIDES AS SOLVENT WESTINGHOUSE ELECTRIC CORP. (US) 1989-10-17 US claimed
US-4677414-A COMPRISING A STRONTIUM ANDOR BARRIUM FERRATE CONTAINING ZIRC ONIUM, HAFNIUM OR TIN; INTERNAL COMBUSTION ENGINES LUCAS ELECTRICAL ELECTRONICS & SYSTEMS LTD. (GB) 1987-06-30 US claimed
US-4584183-A SOLVENT EXTRACTION-EXCHANGE WITH METHYLISOVBUTYL METONE OR OTHER EXTRACTANTS;ENRICHMENT WESTINGHOUSE ELECTRIC CORP. (US) 1986-04-22 US claimed
EP-0160765-A2 Process for separating zirconium isotopes WESTINGHOUSE ELECTRIC CORPORATION (US) 1985-11-13 EP claimed
US-4504113-A Reinforced and chemically resistant optical filament SCHLUMBERGER TECHNOLOGY CORPORATION (US) 1985-03-12 US claimed
US-4489301-A High voltage, high current fuse with combustion assisted operation GENERAL ELECTRIC COMPANY (US) 1984-12-18 US claimed
EP-0078749-A1 Reinforced and chemically resistant optical filament SCHLUMBERGER LIMITED (US) 1983-05-11 EP claimed
US-4225685-A Preparation of polymeric acetal carboxylates using organoaluminum compounds MONSANTO COMPANY (US) 1980-09-30 US claimed
US-3981753-A INFLATION, METAL HYDRIDES, GRAPHITE, ALUMINA KENNECOTT COPPER CORPORATION (US) 1976-09-21 US claimed