SCHEMBL16896236

SCHEMBL16896236

[Hf].[Ta].[Zr]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL11573024 0.87
SCHEMBL28247166 0.87
SCHEMBL28815650 0.87
SCHEMBL28401765 0.82
SCHEMBL28443222 0.82
SCHEMBL28736199 0.82
SCHEMBL28425591 0.82
SCHEMBL2590811 0.82
SCHEMBL33977 0.82
SCHEMBL417334 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 25 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-101809499-B Mask blank, and method for production of imprint mold HOYA CORP 2012-10-10 CN claimed
CN-120683600-A Hafnium tantalum zirconium ternary carbide whisker and preparation method and application thereof 西安工业大学 2025-09-23 CN disclosed
CN-120683600-A Hafnium tantalum zirconium ternary carbide whisker and preparation method and application thereof 西安工业大学 2025-09-23 CN disclosed
CN-110673435-B Mask blank, phase shift mask and manufacturing method of semiconductor device HOYA株式会社 2023-04-21 CN disclosed
CN-110554561-B Mask blank, phase shift mask and manufacturing method of semiconductor device HOYA株式会社 2023-03-21 CN disclosed
CN-112916870-B Preparation method of medium-high entropy alloy material 暨南大学 2022-11-01 CN disclosed
CN-112916870-A Preparation method of medium-high entropy alloy material 暨南大学 2021-06-08 CN disclosed
US-10942442-B2 Mask blank, phase-shift mask, and method of manufacturing semiconductor device HOYA CORPORATION (JP) 2021-03-09 US disclosed
US-20200064727-A1 MASK BLANK, PHASE-SHIFT MASK, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE HOYA CORPORATION (JP) 2020-02-27 US disclosed
CN-110673435-A Mask blank, phase shift mask and manufacturing method of semiconductor device HOYA株式会社 2020-01-10 CN disclosed
US-9952497-B2 Mask blank and method of manufacturing phase shift mask HOYA CORPORATION (JP) 2018-04-24 US disclosed
US-9726972-B2 Mask blank, transfer mask, and method for manufacturing transfer mask HOYA CORPORATION (JP) 2017-08-08 US disclosed
US-20170176848-A1 MASK BLANK, PHASE-SHIFT MASK, METHOD OF MANUFACTURING MASK BLANK, METHOD OF MANUFACTURING PHASE-SHIFT MASK AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE HOYA CORPORATION (JP) 2017-06-22 US disclosed
US-9625806-B2 Mask blank, phase-shift mask, and method for manufacturing the same HOYA CORPORATION (JP) 2017-04-18 US disclosed
US-20170023856-A1 MASK BLANK AND METHOD OF MANUFACTURING PHASE SHIFT MASK HOYA CORPORATION (JP) 2017-01-26 US disclosed
US-9494852-B2 Mask blank and method of manufacturing phase shift mask HOYA CORPORATION (JP) 2016-11-15 US disclosed
US-20160202603-A1 MASK BLANK, TRANSFER MASK, AND METHOD FOR MANUFACTURING TRANSFER MASK HOYA CORPORATION (JP) 2016-07-14 US disclosed
US-20160202602-A1 MASK BLANK, TRANSFER MASK AND METHODS OF MANUFACTURING THE SAME HOYA CORPORATION (JP) 2016-07-14 US disclosed
US-20150338731-A1 MASK BLANK, PHASE-SHIFT MASK, AND METHOD FOR MANUFACTURING THE SAME HOYA CORPORATION (JP) 2015-11-26 US disclosed
US-20150198873-A1 MASK BLANK AND METHOD OF MANUFACTURING PHASE SHIFT MASK HOYA CORPORATION (JP) 2015-07-16 US disclosed