Urea

Urea

SCHEMBL4176677

NC(N)=O.[SiH3]N[SiH3]

nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Urea SCHEMBL30111758 0.78
Urea SCHEMBL187990 0.78
Urea SCHEMBL411583 0.78
Urea SCHEMBL7756359 0.78 LMNA (1.00)
Urea C 13 SCHEMBL12476878 0.78
Urea SCHEMBL8560069 0.78 LMNA (1.00)
Urea SCHEMBL8436158 0.78 LMNA (1.00)
Urea SCHEMBL8434002 0.78 LMNA (1.00)
Urea SCHEMBL20641124 0.78 LMNA (1.00)
Urea SCHEMBL29541638 0.78

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 52 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-117511405-A Functional protective coating and preparation method thereof 中国科学院兰州化学物理研究所 2024-02-06 CN claimed
CN-117186774-A High-temperature radiation refrigeration coating with protection function and preparation method thereof 中国科学院兰州化学物理研究所 2023-12-08 CN claimed
CN-113497361-B Patterned SiC microstructure and application thereof 东莞理工学院 2023-10-13 CN claimed
CN-103403112-B Composition for forming low refractive index film, method for forming low refractive index film, low refractive index film formed by the method, and antireflection film 默克专利有限公司 2016-06-22 CN claimed
CN-103403112-A Composition for forming low refractive index film, method for forming low refractive index film, low refractive index film formed by the method, and antireflection film AZ ELECTRONIC MATERIALS IP JAPAN K K 2013-11-20 CN claimed
CN-100390970-C Method and structure to enhance temperature/humidity/bias performance of semiconductor devices by surface modification IBM (US) 2008-05-28 CN claimed
CN-100349732-C Thermally stable, moisture curable polysilazanes and polysiloxazanes KION CORP (CH) 2007-11-21 CN claimed
EP-1412445-B1 POLYSILAZANE-MODIFIED POLYAMINE HARDENERS FOR EPOXY RESINS CLARIANT FINANCE BVI LTD (VG) 2007-10-31 EP claimed
CN-1695242-A Method and structure to enhance temperature/humidity/bias performance of semiconductor devices by surface modification IBM (US) 2005-11-09 CN claimed
CN-1630578-A Thermally stable, moisture curable polysilazanes and polysiloxazanes KION CORP (US) 2005-06-22 CN claimed
EP-1412445-A4 POLYSILAZANE-MODIFIED POLYAMINE HARDENERS FOR EPOXY RESINS KION CORP (US) 2004-10-27 EP claimed
US-6756469-B2 POLYSILAZANE MOIETY OF SAID POLYSILAZANE-MODIFIED POLYAMINE IS CHARACTERIZED BY REPEATING UNITS OF SILICON-NITROGEN LINKAGES AND CONTAINING REDUCED AMOUNT OF SILICON-HYDROGEN BONDS KION CORPORATION 2004-06-29 US claimed
EP-1412445-A1 POLYSILAZANE-MODIFIED POLYAMINE HARDENERS FOR EPOXY RESINS Kion Corporation (US) 2004-04-28 EP claimed
US-20030045635-A1 Polysilazane-modified polyamine hardeners for epoxy resins AZ ELECTRONIC MATERIALS (LUXEMBOURG) S.À R.L. (LU) 2003-03-06 US claimed
WO-2003008514-A1 POLYSILAZANE-MODIFIED POLYAMINE HARDENERS FOR EPOXY RESINS KION CORPORATION (US) 2003-01-30 WO claimed
WO-1998051981-A1 GLASS FIBER REINFORCED CERAMIC MOLDING COMPOSITIONS OWENS CORNING (US) 1998-11-19 WO claimed
CN-118251281-A Alloy composition 赫格纳斯公司 2024-06-25 CN disclosed
US-11993546-B2 Ceramic matrix composites, and methods and systems for making same LANCER SYSTEMS LP (US) 2024-05-28 US disclosed
US-20030045635-A1 Polysilazane-modified polyamine hardeners for epoxy resins AZ ELECTRONIC MATERIALS (LUXEMBOURG) S.À R.L. (LU) 2003-03-06 US disclosed
WO-2003008514-A1 POLYSILAZANE-MODIFIED POLYAMINE HARDENERS FOR EPOXY RESINS KION CORPORATION (US) 2003-01-30 WO disclosed